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Samsung Electronics

K4B4G1646E-BCNB - 4Gb DDR3 SDRAM,256Mx16,1.35V | Samsung

料号: K4B4G1646E-BCNB ✓ 量产中
有现货 1-3 个工作日内发货
1.35 V (1.283 V to 1.45 V) Vdss 96-ball FBGA Package DDR3 SDRAM Memory
低至 $13.5227 USD / 件
最小起订量: 1 |
价格更新于: 2026-08-17
批量定价
数量 单价 小计
1 $23.1818 $23.18
10 $16.7424 $167.42
100 $14.8106 $1,481.06
500 $14.1667 $7,083.35
1,000 $13.5227 $13,522.70
ℹ️ 所有价格均以 USD 计价

K4B4G1646E-BCNB 概述

Samsung K4B4G1646E-BCNB 是一款 4Gb DDR3 SDRAM,组织方式为 256Mx16,工作电压为 1.35V(低电压),数据传输速率为 1866 Mbps。它非常适合需要高带宽和低功耗的移动和嵌入式应用。该器件采用 96-ball FBGA 封装,符合 RoHS 标准。

直接替换替代料: K4B4G1646E-BCNB ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: K4B4G1646E-BCNB (相同外形与封装尺寸) ——差异在于 Package, Memory Type, Operating Temperature, Supply Voltage, Burst Length.

Samsung Electronics
Package: 96-FBGA
Supply Voltage: 1.5 V (DDR3L variants 1.35 V)
对比 K4B4G1646E-BCNB →
Samsung Electronics
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Memory Type: DDR3L SDRAM
Operating Temperature: 0°C to +95°C (TC)
对比 K4B4G1646E-BCNB →

快速对比工具——选择替代料号进行并排对比:

MT41K256M16TW-107

Micron Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · Parallel · 933 MHz (DDR3L-1866) · 20 ns · 1.35 V · 16 bit

✓ 有现货

$14.1 / 个

查看数据手册 →

H5TQ4G63AFR-H9C

SK hynix
DDR3 SDRAM · 4 Gb · 256M x 16 · 1.5 V · 0.255 ns · 96-ball TFBGA · RECTANGULAR · 8192

✓ 有现货

$6.5 / 个

查看数据手册 →

IS43TR16256A-15HBL-TR

ISSI, Integrated Silicon Solution Inc
DDR3 SDRAM · 4 Gbit · 256M x 16 · 667 MHz · 1333 Mbps · 20 ns · 1.5 V · 96-TWBGA (9x13 mm)

✓ 有现货

$10.3409 / 个

查看数据手册 →

W632GU6NB

Winbond DDR3 4Gb 256Mx16

📋 参考替代料(不在目录中)

AS4C256M16D3L-12BCN

Alliance Memory
DDR3L SDRAM · 4 Gbit · 256M x 16 · 16 bit · 800 MHz · 1600 Mbps · 20 ns · 1.35 V

✓ 有现货

$6 / 个

查看数据手册 →

K4B4G1646E-BCNB 最大额定值与电气特性

存储器类型 DDR3 SDRAM
存储容量 4 Gb
存储组织 256M x 16
电源电压 1.35 V (1.283 V to 1.45 V)
数据速率 1866 Mbps
工作温度 0C to +95C
封装 96-ball FBGA
安装类型 Surface Mount
RoHS 状态 Compliant
引脚数 96
接口类型 Parallel
Refresh 8K / 64 ms
Burst Length 8, 4 (fixed)

K4B4G1646E-BCNB 引脚配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
引脚 A1 VDD — Power supply (1.35V)
引脚 A2 DQ0 — Data I/O 0
引脚 A3 DQ1 — Data I/O 1
引脚 B1 VSS — Ground
引脚 B2 DQ2 — Data I/O 2
引脚 B3 DQ3 — Data I/O 3
引脚 C1 VDDQ — DQ power supply
引脚 C2 DQS0 — Data strobe 0 (positive)
引脚 C3 DQS0# — Data strobe 0 (negative)
引脚 D1 VSS — Ground
引脚 D2 CLK — Clock input
引脚 D3 CLK# — Complementary clock input
引脚 E1 CKE — Clock enable
引脚 E2 CS# — Chip select
引脚 E3 RAS# — Row address strobe
引脚 F1 CAS# — Column address strobe
引脚 F2 WE# — Write enable
引脚 F3 BA0 — Bank address 0
引脚 G1 BA1 — Bank address 1
引脚 G2 A0 — Address input 0
引脚 G3 A1 — Address input 1

典型应用

K4B4G1646E-BCNB 适用于 6 应用s: Mobile Computing, Embedded Systems, Networking Equipment, Consumer Electronics, Automotive Infotainment, Industrial Automation.

📱

Mobile Computing

Used in laptops and tablets for main memory with low power consumption.

🏭

Embedded Systems

Ideal for industrial single-board computers and IoT gateways.

🌐

Networking Equipment

Used in routers, switches, and network appliances for packet buffering.

📺

Consumer Electronics

Found in smart TVs, set-top boxes, and gaming consoles.

🚗

Automotive Infotainment

Used in car infotainment systems and navigation units.

🏭

Industrial Automation

Deployed in PLCs and HMI panels for data logging and display.

What is the supply voltage range for K4B4G1646E-BCNB?
The supply voltage is 1.35V nominal, with a range of 1.283V to 1.45V for low-voltage DDR3 operation.
What is the maximum data rate of this DDR3 SDRAM?
The K4B4G1646E-BCNB supports a data rate of 1866 Mbps per pin.
What is the memory organization of K4B4G1646E-BCNB?
It is organized as 256M words x 16 bits, totaling 4 Gb.
What package does K4B4G1646E-BCNB come in?
It is housed in a 96-ball FBGA (Fine-pitch Ball Grid Array) package.
Is K4B4G1646E-BCNB RoHS compliant?
Yes, the device is RoHS compliant.
What is the operating temperature range?
The operating temperature range is 0°C to +95°C (case temperature).
Can K4B4G1646E-BCNB be used in mobile applications?
Yes, its low voltage (1.35V) and high density make it suitable for mobile and embedded applications.
What is the difference between DDR3 and DDR3L?
DDR3L operates at 1.35V, while standard DDR3 operates at 1.5V. K4B4G1646E-BCNB is a DDR3L device.
Does K4B4G1646E-BCNB support ECC?
No, this is a non-ECC memory. ECC versions are typically x72 organizations.
What is the burst length supported?
It supports burst lengths of 8 and 4 (fixed).
What is the refresh requirement?
It requires 8K refresh cycles every 64 ms.
Is K4B4G1646E-BCNB compatible with DDR3 sockets?
Yes, it is pin-compatible with standard DDR3 sockets, but voltage levels must match.
What is the typical power consumption?
[DATA_NEEDED: Typical power consumption] Please refer to the datasheet for detailed power numbers.
What is the part number suffix meaning?
The suffix 'E' indicates the generation, 'B' indicates package type (FBGA), 'CNB' indicates speed and temperature grade.
Where can I find the full datasheet?
The datasheet is available on Samsung's semiconductor website at the provided URL.
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