K4B4G1646E-BMMA vs K4B4G1646D-BYK00 对比
详细并排对比 K4B4G1646E-BMMA 出自 Samsung Electronics 和 K4B4G1646D-BYK00 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ 量产中规格对比
| 参数 | K4B4G1646E-BMMA | K4B4G1646D-BYK00 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $16.08 | $7.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 数据速率 | 1600 Mbps | 1600 Mbps |
| 电源电压 | 1.35 V | 1.35 V (also operates at 1.5 V) |
| 工作温度 | -40°C to +95°C | 0°C to 85°C |
| 封装 | 96-FBGA (9x13 mm) | 96-ball TFBGA |
| Number of Banks | 8 | — |
| 接口 | Parallel | — |
| Clock Frequency | 800 MHz | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | Programmable |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination | Yes (Dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Number of Terminals | — | 96 |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| 无卤 | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |