K4B4G1646E-BYMA vs IS43TR16256AL-125KBL 对比
详细并排对比 K4B4G1646E-BYMA 出自 Samsung Electronics 和 IS43TR16256AL-125KBL 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ 量产中规格对比
| 参数 | K4B4G1646E-BYMA | IS43TR16256AL-125KBL |
|---|---|---|
| 品牌 | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $14.32 | $5.60 |
| 存储器类型 | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| 存储组织 | 256M x 16 | — |
| 电源电压 | 1.35 V (1.28 V to 1.575 V) | 1.35V (backward compatible to 1.5V) |
| Clock Frequency | 933 MHz | 800 MHz |
| 数据速率 | 1866 Mbps/pin | 1600 Mbps |
| 工作温度 | 0°C to +95°C | 0°C ~ 95°C |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| 封装 | FBGA-96 | 96-TWBGA (9x13mm) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | [DATA_NEEDED: Burst Length] | — |
| 引脚数 | 96 | — |
| 存储容量 | — | 4Gbit (256M x 16) |
| 接口 | — | Parallel |
| Access Time | — | 20 ns |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| Number of Terminals | — | 96 |