K4B4G1646F-BYK0 vs H5TC4G63AFR-PBA 对比
详细并排对比 K4B4G1646F-BYK0 出自 Samsung Electronics 和 H5TC4G63AFR-PBA 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646F-BYK0 | H5TC4G63AFR-PBA |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.80 | $3.98 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gb | — |
| Memory Organization | 256M x 16 | — |
| 电源电压 | 1.35V / 1.5V | — |
| 数据速率 | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Clock Frequency | 933 MHz | — |
| 封装 | 96-ball FBGA | 96-ball FBGA |
| 工作温度 | 0°C to 95°C (TC) | — |
| 接口 | Parallel | 16-bit I/O |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| CAS 延迟 | Programmable | — |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Density | — | 4Gb |
| 存储组织 | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11, 12, 13 |
| 工作温度范围 | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |