K4B4G1646F-BYK0 vs H5TC4G63AFR-PBA Comparison
Detailed side-by-side comparison of K4B4G1646F-BYK0 by Samsung Electronics and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646F-BYK0
K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646F-BYK0 β Active
Specification Comparison
| Parameter | K4B4G1646F-BYK0 | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $3.98 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb | β |
| Memory Organization | 256M x 16 | β |
| Supply Voltage | 1.35V / 1.5V | β |
| Data Rate | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Clock Frequency | 933 MHz | β |
| Package | 96-ball FBGA | 96-ball FBGA |
| Operating Temperature | 0Β°C to 95Β°C (TC) | β |
| Interface | Parallel | 16-bit I/O |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| CAS Latency | Programmable | β |
| On-Die Termination | Yes | β |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | β |
| Self-Refresh | Yes | β |
| RoHS | Compliant | Compliant |
| Density | β | 4Gb |
| Organization | β | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | β | 1.35V |
| Ball Pitch | β | 0.8mm |
| Number of Banks | β | 8 |
| CAS Latency (CL) | β | 11, 12, 13 |
| Operating Temperature Range | β | 0Β°C to +95Β°C (Tcase) |
| On-Die Termination (ODT) | β | Yes |
| Write Leveling | β | Yes |
| Auto Self-Refresh | β | Yes |
| Partial Array Self-Refresh | β | Yes |