K4RAH086VB-BIQK vs H5CG48AGBDX018N 对比

详细并排对比 K4RAH086VB-BIQK 出自 Samsung Electronics 和 H5CG48AGBDX018N 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ 量产中
SK hynix
H5CG48AGBDX018N H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N ✓ 量产中

规格对比

参数 K4RAH086VB-BIQK H5CG48AGBDX018N
品牌 Samsung Electronics SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.25 $87.42
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 16 Gb 16 Gb (2G x 8)
存储组织 2G x 8 2G x 8
数据速率 4800 Mbps/pin 5600 Mbps
Core Supply Voltage 1.1 V (nominal) —
封装 82FBGA 82-ball FCBGA (JEDEC DDR5 78/82-ball)
Configuration X8 —
Speed Grade BIQK (-BIQK bin) —
ECC On-die ECC (DDR5 standard) —
接口 DDR5 (CA reduced pin count) JEDEC DDR5
Burst Length 16 / 32 —
Operating Mode DLL enabled —
RoHS 状态 Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) [DATA_NEEDED: RoHS status]
工作温度 [DATA_NEEDED: operating temperature range] -40C to +85C
CAS 延迟 [DATA_NEEDED: CAS latency (CL)] —
Refresh [DATA_NEEDED: refresh rate specification] —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
电源电压 — 1.1 V
Bus Width — 8 bit
安装类型 — Surface Mount
Memory Generation — DDR5 (SK hynix A-die)
Clock Frequency — up to 5600 MHz (data rate 5600 Mbps)
Application Class — Computing, industrial controllers, embedded logging

数据手册与资源

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