K4RAH086VB-BIQK vs K4RAH086VB-BCWM 对比

详细并排对比 K4RAH086VB-BIQK 出自 Samsung Electronics 和 K4RAH086VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ 量产中
Samsung Electronics
K4RAH086VB-BCWM K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor

K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor

K4RAH086VB-BCWM ✓ 量产中

规格对比

参数 K4RAH086VB-BIQK K4RAH086VB-BCWM
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.25 $44.55
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 16 Gb —
存储组织 2G x 8 2G x 8
数据速率 4800 Mbps/pin 5600 Mbps
Core Supply Voltage 1.1 V (nominal) —
封装 82FBGA FBGA-82
Configuration X8 —
Speed Grade BIQK (-BIQK bin) BCWM
ECC On-die ECC (DDR5 standard) On-die ECC
接口 DDR5 (CA reduced pin count) DDR5 (parallel)
Burst Length 16 / 32 32 (BL32, DDR5 standard)
Operating Mode DLL enabled —
RoHS 状态 Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) Compliant
工作温度 [DATA_NEEDED: operating temperature range] Commercial temperature range (per datasheet)
CAS 延迟 [DATA_NEEDED: CAS latency (CL)] —
Refresh [DATA_NEEDED: refresh rate specification] —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
存储容量 — 16 Gb
电源电压 — 1.1 V
安装类型 — Surface Mount
Technology — DRAM (volatile)
生命周期状态 — Active
Sub-channel Architecture — Dual independent 32-bit sub-channels (per DDR5 spec)

数据手册与资源

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