K4RAH086VP-BCWM vs K4RAH165VB-BCQK 对比
详细并排对比 K4RAH086VP-BCWM 出自 Samsung Electronics 和 K4RAH165VB-BCQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RAH086VP-BCWM | K4RAH165VB-BCQK |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| 存储容量 | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | 1G x 16 |
| 数据速率 | 5600 Mbps/pin | 4800 Mbps |
| 电源电压 | 1.1 V | — |
| 接口 | Parallel | — |
| Technology | DRAM DDR5 | — |
| Memory Format | DRAM | DRAM (volatile) |
| Volatile / Non-Volatile | Volatile | — |
| 封装 | [DATA_NEEDED: exact FBGA package code and body size] | 106-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tray | Tray |
| Application Segment | Industrial | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| 生命周期状态 | Active | Active |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.1 V |
| Error Correction | — | On-die ECC |
| 特性 | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Unit Price | — | [DATA_NEEDED: unit price] |