K4RAH165VB-BIQK vs K4RAH086VB-BCWM 对比

详细并排对比 K4RAH165VB-BIQK 出自 Samsung Electronics 和 K4RAH086VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RAH165VB-BIQK K4RAH165VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH165VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH165VB-BIQK ✓ 量产中
Samsung Electronics
K4RAH086VB-BCWM K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor

K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor

K4RAH086VB-BCWM ✓ 量产中

规格对比

参数 K4RAH165VB-BIQK K4RAH086VB-BCWM
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $44.55
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 16 Gb —
存储组织 1G x 16 2G x 8
数据速率 4800 Mbps (MT/s) 5600 Mbps
Supply Voltage (VDD) 1.1 V —
On-Die ECC Yes —
Auto Self-Refresh Yes —
Asynchronous Reset Yes —
Write Leveling Yes —
CRC Function Yes —
ZQ Calibration Yes —
DLL Enabled Mode Yes (spec mode per datasheet) —
封装 [DATA_NEEDED: exact package ball count / FBGA designation] FBGA-82
工作温度 [DATA_NEEDED: operating temperature range] Commercial temperature range (per datasheet)
品牌 Samsung Semiconductor —
存储容量 — 16 Gb
电源电压 — 1.1 V
接口 — DDR5 (parallel)
安装类型 — Surface Mount
Technology — DRAM (volatile)
Speed Grade — BCWM
ECC — On-die ECC
Burst Length — 32 (BL32, DDR5 standard)
RoHS 状态 — Compliant
生命周期状态 — Active
Sub-channel Architecture — Dual independent 32-bit sub-channels (per DDR5 spec)

数据手册与资源

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