K4RBH046VM-BCCP vs K4RCH046VM-2CCM 对比
详细并排对比 K4RBH046VM-BCCP 出自 Samsung Electronics 和 K4RCH046VM-2CCM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RBH046VM-BCCP | K4RCH046VM-2CCM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 不推荐新设计 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.60 | $0.00 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| 存储容量 | 32 Gb | — |
| Memory Organization | 2G x 4 | — |
| 数据速率 | 6400 Mbps | 5600 Mbps |
| 电源电压 | 1.1 V | 1.1 V |
| 接口 | Parallel | — |
| 封装 | 78-FBGA | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0 C to +85 C | 0 to 85 C |
| Memory Format | DRAM | — |
| Technology | DDR5 | — |
| Packaging | Tray | — |
| Product Status | Sample / Active | Sample |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: moisture sensitivity level] |
| Access Latency (CL) | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS latency] |
| Density | — | 32 Gb |
| 存储组织 | — | 4G x 4 |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |
| 接口类型 | — | [DATA_NEEDED: interface type] |
| On-Die ECC | — | [DATA_NEEDED: on-die ECC support] |