K4RBH165VB-BCQK vs K4RHE165VB-BCWM 对比

详细并排对比 K4RBH165VB-BCQK 出自 Samsung Electronics 和 K4RHE165VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ 量产中
Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM ✓ 量产中

规格对比

参数 K4RBH165VB-BCQK K4RHE165VB-BCWM
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
存储器类型 DDR5 SDRAM DDR5 SDRAM
存储容量 16 Gb —
存储组织 1G x 16 1G x 16
数据速率 4800 Mbps/pin 5600 Mbps
Speed Grade BCQK (4800 Mbps) —
工作温度 0 C to +85 C 0 to 85 C
Self Refresh Auto self-refresh —
Reset Function Asynchronous reset —
Error Correction On-chip (on-die) ECC —
Write Leveling Yes —
CRC Function Yes —
ZQ Calibration Yes —
电源电压 [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] 1.1 V
Package Type [DATA_NEEDED: exact package code, expected FBGA surface mount] —
安装类型 Surface Mount Surface Mount (BGA)
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Burst Length [DATA_NEEDED: burst length (BL16 per DDR5 standard)] —
Density — 24 Gb (3 GB)
封装 — 106 FBGA
Product Status — Mass Production
接口 — DDR5 (parallel, DDR)
Access Type — Synchronous
Clock Rate (nominal) — 2800 MHz (5600 MT/s DDR)
Ball Count — 106
MSL 等级 — [DATA_NEEDED: MSL Level]
Standard Pack Quantity — [DATA_NEEDED: Standard Pack Quantity]

数据手册与资源

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