K4RBH165VB-BCQK vs K4RHE165VB-BCWM Comparison

Detailed side-by-side comparison of K4RBH165VB-BCQK by Samsung Electronics and K4RHE165VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ Active
Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM ✓ Active

Specification Comparison

Parameter K4RBH165VB-BCQK K4RHE165VB-BCWM
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.00
Memory Type DDR5 SDRAM DDR5 SDRAM
Memory Size 16 Gb —
Organization 1G x 16 1G x 16
Data Rate 4800 Mbps/pin 5600 Mbps
Speed Grade BCQK (4800 Mbps) —
Operating Temperature 0 C to +85 C 0 to 85 C
Self Refresh Auto self-refresh —
Reset Function Asynchronous reset —
Error Correction On-chip (on-die) ECC —
Write Leveling Yes —
CRC Function Yes —
ZQ Calibration Yes —
Supply Voltage [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] 1.1 V
Package Type [DATA_NEEDED: exact package code, expected FBGA surface mount] —
Mounting Type Surface Mount Surface Mount (BGA)
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Burst Length [DATA_NEEDED: burst length (BL16 per DDR5 standard)] —
Density — 24 Gb (3 GB)
Package — 106 FBGA
Product Status — Mass Production
Interface — DDR5 (parallel, DDR)
Access Type — Synchronous
Clock Rate (nominal) — 2800 MHz (5600 MT/s DDR)
Ball Count — 106
MSL Level — [DATA_NEEDED: MSL Level]
Standard Pack Quantity — [DATA_NEEDED: Standard Pack Quantity]

Datasheets & Resources

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