K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung
料号： K6F2016U4D-FF70T00 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.88 | $28.80 |
| 100 | $2.56 | $256.00 |
| 500 | $2.3 | $1,150.00 |
| 1,000 | $2.05 | $2,050.00 |
K6F2016U4D-FF70T00 概述
An asynchronous SRAM is a type of random-access memory that does not require a clock signal for read or write operations; data is accessed directly by applying an address on the address bus and activating the chip enable (CE), output enable (OE), and write enable (WE) control pins. Within the memory IC hierarchy, it belongs to the solid-state SRAM class, sitting above DRAM in speed determinism and below synchronous SRAM in density, and is widely used as a power-management-level companion memory for microprocessors and DSPs.
Key features of the K6F2016U4D family include super-low-power full CMOS process technology, a wide 2.7V to 3.3V operating voltage range, industrial temperature support, and a compact 48-ball chip-scale package for flexible system design. The 16-bit organization allows word-wide data paths that simplify interfacing to 16-bit processors without external bus-width glue logic.
Technically, the device is fabricated on Samsung's advanced full CMOS process, which minimizes standby and operating current. Revision history of the family datasheet notes parameter adjustments such as tWP set to 50ns for 70ns-grade product, indicating active datasheet maintenance. Speed grades of 55ns and 70ns are offered under the FF55 and FF70 suffixes.
Typical applications include battery-powered portable instruments, industrial control systems, network equipment buffering, and as code/data scratch memory for FPGAs and microcontrollers that require deterministic, zero-wait-state access.
Designers should verify that the 70ns access time meets the system bus timing margin, and should properly terminate unused balls per datasheet guidance. Because the part is offered in a BGA package, X-ray inspection capability is recommended for incoming quality control and rework planning.
This page synthesizes distributor availability data, datasheet-derived specifications, drop-in alternative analysis, and design guidance not found in the manufacturer datasheet alone.
直接替换替代料： K6F2016U4D-FF70T00 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K6F2016U4D-FF70T00 （相同外形与封装尺寸） ——差异在于 Package, Memory Size, Memory Type, Organization, Technology.
快速对比工具——选择替代料号进行并排对比：
K6F2016U4D-FF55T00
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
K6F2016U4D-FF55
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
IS62WV12816DALL-70TI
✅ 直接替换📋 参考替代料（不在目录中）
K6F2016U4D-FF70T00 最大额定值与电气特性
| 存储器类型 | Asynchronous SRAM |
| 存储容量 | 2 Mbit |
| 存储组织 | 128K x 16 |
| Access Time (tAA) | 70 ns |
| Supply Voltage (Vcc) | 2.7 V to 3.3 V |
| 接口 | Parallel |
| Technology | Full CMOS |
| Write Cycle Time (tWP) | 50 ns |
| 工作温度 | Industrial temperature range |
| 封装 | 48-FBGA (6x7 mm) chip-scale package |
| 安装类型 | Surface Mount |
| Speed Grades in Family | 55 ns, 70 ns |
| Power Feature | Super low power and low voltage |
K6F2016U4D-FF70T00 48-fbga (6x7 mm) chip-scale package 引脚配置指南
K6F2016U4D-FF70T00（48-fbga (6x7 mm) chip-scale package 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K6F2016U4D-FF70T00.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K6F2016U4D-FF70T00 适用于 6 应用s: Battery-Powered Portable Instruments, Industrial Control Systems, FPGA Design Buffers and Scratch Memory, Networking Equipment Buffering, Automotive and Avionics Legacy Support, Test and Measurement Equipment.
Battery-Powered Portable Instruments
The K6F2016U4D-FF70T00 fits battery-powered portable instruments because Samsung's full CMOS process delivers super-low standby power at a 2.7V to 3.3V supply, directly extending battery life in handheld meters, data loggers, and field test equipment. Its 70ns asynchronous access requires no clock, so the memory can remain in standby nearly continuously and wake with zero-wait-state reads. In a typical design, the SRAM hangs on a microcontroller's external memory bus with CE used as a power-down gating signal; the 48-ball 6x7mm chip-scale package keeps the memory footprint under 42 mm2. Designers should confirm exact standby current from the datasheet DC table when computing total battery budget.
推荐
Industrial Control Systems
In industrial controllers and PLC I/O modules, the K6F2016U4D-FF70T00 provides deterministic 128K x 16 scratch memory with a 70ns access time, ensuring zero-wait-state operation from 3.3V processors without adding DRAM refresh complexity. Samsung's family datasheet states the family supports the industrial temperature range, which suits factory-floor ambient extremes. Typical use is buffering process variables or holding fast-changing setpoints where flash write endurance would be exhausted. Because writes are asynchronous and unlimited in endurance (no wear), SRAM outlasts flash for frequently updated variables. Pair with a supervisor IC that holds CE high during brownout to preserve data integrity during power dips.
推荐
FPGA Design Buffers and Scratch Memory
The K6F2016U4D-FF70T00 serves as external scratch RAM for FPGAs and SoC designs whose internal block RAM is exhausted. Its 16-bit parallel organization maps naturally onto FPGA I/O banks, and the asynchronous 70ns interface is simple to implement with Verilog/VHDL state machines, avoiding the timing complexity of synchronous DDR memory. At 2Mbit (256 KB), it suits FIFO expansion, packet buffering, and DSP coefficient storage. On a 3.3V bank, address/control timing margin at 70ns supports bus rates up to roughly 14 MHz full-cycle without wait states, per the datasheet tAA specification. Always verify hold-time requirements at the FPGA bank level against datasheet tOH.
推荐
Networking Equipment Buffering
In legacy routers, switches, and line-card designs, the K6F2016U4D-FF70T00 provides 256 KB of packet-descriptor or queue-buffer storage at 3.3V with a parallel interface. The 70ns access time supports descriptor table walks for moderate line rates, while super-low-power CMOS operation reduces system thermal load in fanless network appliances. Its 48-ball FBGA (6x7 mm) footprint saves board area versus TSOP-packaged equivalents, easing routing in dense designs. Samsung datasheet documentation for the K6F2016U4D family highlights low-voltage operation (2.7V to 3.3V) compatible with standard networking logic rails. For new high-speed designs, synchronous memory is preferred; this part targets legacy and moderate-rate buffering.
推荐
Automotive and Avionics Legacy Support
The K6F2016U4D-FF70T00 supports legacy automotive ECU and avionics LRU platforms originally designed around Samsung's 2Mbit SRAM family, where the industrial temperature range and 2.7V to 3.3V operation match classic 3.3V logic ecosystems. The 128K x 16 organization is common in MIL-std-derived data buses and fault-log storage. Because the part is distributed through marketplace suppliers (per DigiKey listings as of 2026-09-01), availability may fluctuate; buyers supporting long-lifecycle programs should qualify the ISSI IS62WV12816DALL-70TI as a second source and keep safety stock. Verify package ballout compatibility against the qualified PCB footprint before any substitution.
推荐
Test and Measurement Equipment
Bench instruments, oscilloscope front-end capture buffers, and automated test fixtures use the K6F2016U4D-FF70T00 as fast, deterministic intermediate storage. The 70ns asynchronous access allows CPU-side readout without DMA complexity, while the 2Mbit capacity covers waveform segments and calibration tables. Samsung's full CMOS process keeps the instrument's quiescent load low, important for battery and bench-top power budgets. Datasheet documentation indicates the family supports industrial temperature ranges, suiting lab and field environments. Designers should decouple Vcc with 0.1uF ceramics at each supply ball pair and keep address bus stubs short in the 48-ball FBGA layout to preserve signal integrity at full bus speed.
推荐
推荐产品汇总
工程参考数据： K6F2016U4D-FF70T00 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K6F2016U4D-FF55T00 | K6F2016U4D-FF55 | IS62WV12816DALL-70TI |
|---|---|---|---|---|
| Package | 48-FBGA (6x7 mm) | 48-FBGA (6x7 mm) - same | 48-FBGA (6x7 mm) - same | verify suffix: 48-ball BGA or 44-TSOP-II |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Integrated Silicon Solution (ISSI) |
| Memory Size | 2 Mbit (128K x 16) | 2 Mbit (128K x 16) | 2 Mbit (128K x 16) | 2 Mbit (128K x 16) |
| Access Time (tAA) | 70 ns | 55 ns | 55 ns | 70 ns |
| Technology | Full CMOS (low power) | Full CMOS (low power) | Full CMOS (low power) | CMOS |
| Interface | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous | Parallel, asynchronous |
| Second-Source Availability | Marketplace/distributor channels | Same family - shares supply risk | Same family - shares supply risk | Independent manufacturer - reduces supply risk |
关键差异点
- Faster 55ns grade available in identical package （对比 K6F2016U4D-FF55T00)
- True cross-brand second source identified （对比 IS62WV12816DALL-70TI)
- Chip-scale BGA footprint saves board area （对比 IS62WV12816DALL-70TI (TSOP-II variants))
设计说明
Verify timing margin before selecting the 70ns grade. The Samsung datasheet revision notes show tWP set to 50ns for the 70ns product, so write-cycle budgeting must use updated datasheet values, not earlier revisions. If the host bus is faster than ~14 MHz full-cycle, the FF55 (55ns) grade should be used instead. Also confirm the exact T00 package/ballout ordering suffix against the PCB footprint, since BGA ball assignments are suffix-specific.
The 48-ball FBGA (6x7 mm) chip-scale package requires controlled reflow profiles and adequate via-in-pad or dog-bone fanout under the ball grid. Maintain 0.1uF ceramic decoupling placed within 2mm of the Vcc balls, and keep address bus traces length-matched within 10mm to minimize skew at the 70ns timing level. X-ray inspection is recommended for incoming quality control on BGA assemblies to detect head-in-pillow and voiding defects.
The device operates from 2.7V to 3.3V per Samsung datasheet data. For battery designs, use the CE pin to place the SRAM in standby (deselect) whenever the bus is idle - CMOS standby current is orders of magnitude below active current. Estimated: for a typical 128Kx16 CMOS SRAM family, standby is in the uA range versus mA-range active current, but exact figures must be taken from the datasheet DC characteristics table, which is not reproduced in the verified web data provided.
合规信息
Compliance status not stated in the provided verified web data; request manufacturer certificate of conformance for RoHS/REACH declarations.
