K6F3216U6M-EF70T vs K6X0808C1D-BF70T 对比
详细并排对比 K6F3216U6M-EF70T 出自 Samsung Electronics 和 K6X0808C1D-BF70T 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K6F3216U6M-EF70T | K6X0808C1D-BF70T |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.10 | $1.05 |
| 存储器类型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 存储容量 | 32 Mbit | 256 Kbit |
| 存储组织 | 2M x 16 | — |
| 电源电压 | 3 V | — |
| Access Time | 55 ns | 70 ns |
| 接口 | Parallel | — |
| Technology | Full CMOS Static RAM | — |
| 封装 | 55-TFBGA (7.5 x 12 mm) | 28-SOP |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | -40C to +85C (TA) |
| Speed Grade | -EF70 (55 ns) | — |
| Standard Pack Qty | 2400 | — |
| RoHS 状态 | NO (per third-party listing) | Compliant |
| Memory Composition | Volatile SRAM | — |
| Refresh Requirement | None (static memory) | None (fully static operation) |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| Process Technology | — | CMOS |
| Address Bus Width | — | 15 bit (A0-A14) |
| 数据总线宽度 | — | 8 bit (I/O0-I/O7) |
| Control Signals | — | CE, OE, WE |
| I/O Compatibility | — | TTL compatible |