K6X0808C1D-BF70 - 32Kx8 70ns Async SRAM | Samsung
料号： K6X0808C1D-BF70 ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.65 | $26.50 |
| 100 | $2.3 | $230.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.85 | $1,850.00 |
K6X0808C1D-BF70 概述
An asynchronous SRAM is a type of volatile solid-state memory that stores each bit using a bistable latch (typically six transistors per cell) and does not require a clock or refresh cycles, unlike DRAM. In the memory hierarchy, SRAM sits above DRAM as the fastest category of external random-access memory, and the asynchronous subcategory communicates address, data, and control signals in pure combinational fashion - the access time (here 70 ns from address valid to data valid) is the only timing constraint, making these devices extremely simple to interface with 8-bit microcontrollers, 8051-family MCUs, and legacy bus designs.
Key features of the K6X0808C1D-BF70 include its 32K x 8 organization suited to byte-wide data buses, the 70 ns commercial access-time grade, CMOS technology delivering low standby power, and a JEDEC-standard control set of chip enable (CE), output enable (OE), and write enable (WE) pins for direct bus connection without glue logic in most designs.
Technically, the device uses a fully static CMOS cell array with row/column decoders and tri-state I/O buffers. Data retention is maintained by the CE control: deselecting the chip drives I/O pins to high impedance and drops the array into a low-current standby state, an advantage for battery-backed memory applications. Because there are no refresh requirements, software and hardware overhead are zero compared with pseudo-static or dynamic alternatives.
Typical applications include embedded control boards requiring non-cache scratchpad RAM, industrial instruments, telecom line cards, test equipment buffers, and battery-backed data logging where a small, reliable, low-power memory pool is needed.
Design-wise, ensure address setup and CE/OE pulse widths meet the 70 ns timing budget at your system clock rate, and decouple VCC with 0.1 uF ceramics close to the package.
This page synthesizes distributor availability, drop-in same-family alternatives, and practical design notes not consolidated in the manufacturer datasheet.
直接替换替代料： K6X0808C1D-BF70 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K6X0808C1D-BF70 （相同外形与封装尺寸） ——差异在于 Memory Type, Access Time, Package, I/O Type, Operating Temperature.
快速对比工具——选择替代料号进行并排对比：
K6X0808C1D-BF55
✅ 直接替换✓ 有现货
$1.85 / 个
查看数据手册 →K6X0808C1D-BF70T
✅ 直接替换✓ 有现货
$1.05 / 个
查看数据手册 →K6X0808C1D-GF70T00
✅ 直接替换✓ 有现货
$1.85 / 个
查看数据手册 →K6X0808C1D-BF70 最大额定值与电气特性
| 存储器类型 | Asynchronous SRAM (CMOS) |
| Density | 256 Kbit |
| 存储组织 | 32K x 8 |
| Access Time | 70 ns |
| 接口 | Parallel |
| Technology | CMOS |
| 封装 | 28-SOP (PDSO28) |
| 安装类型 | Surface Mount |
| 工作温度 | 0C to +70C (commercial grade, BF suffix) |
| Control Signals | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) |
| Address Bus | A0-A14 (15 address lines) |
K6X0808C1D-BF70 引脚配置
| 引脚 1 | A14 — Address input bit 14 (MSB) |
| 引脚 2 | A12 — Address input bit 12 |
| 引脚 3 | A7 — Address input bit 7 |
| 引脚 4 | A6 — Address input bit 6 |
| 引脚 5 | A5 — Address input bit 5 |
| 引脚 6 | A4 — Address input bit 4 |
| 引脚 7 | A3 — Address input bit 3 |
| 引脚 8 | A2 — Address input bit 2 |
| 引脚 9 | A1 — Address input bit 1 |
| 引脚 10 | A0 — Address input bit 0 (LSB) |
| 引脚 11 | DQ0 — Data input/output bit 0 |
| 引脚 12 | DQ1 — Data input/output bit 1 |
| 引脚 13 | DQ2 — Data input/output bit 2 |
| 引脚 14 | GND — Ground |
| 引脚 15 | DQ3 — Data input/output bit 3 |
| 引脚 16 | DQ4 — Data input/output bit 4 |
| 引脚 17 | DQ5 — Data input/output bit 5 |
| 引脚 18 | DQ6 — Data input/output bit 6 |
| 引脚 19 | DQ7 — Data input/output bit 7 (MSB) |
| 引脚 20 | CE — Chip enable (active low) |
| 引脚 21 | A10 — Address input bit 10 |
| 引脚 22 | OE — Output enable (active low) |
| 引脚 23 | A11 — Address input bit 11 |
| 引脚 24 | A9 — Address input bit 9 |
| 引脚 25 | A8 — Address input bit 8 |
| 引脚 26 | A13 — Address input bit 13 |
| 引脚 27 | WE — Write enable (active low) |
| 引脚 28 | VCC — Power supply |
典型应用
K6X0808C1D-BF70 适用于 6 应用s: Embedded 8-bit MCU Scratchpad Memory, Industrial Instrumentation Data Buffer, Battery-Backed Data Retention, Telecom and Line-Card Memory, Test and Measurement Equipment, Legacy Board Repair and Last-Time Buy.
Embedded 8-bit MCU Scratchpad Memory
The K6X0808C1D-BF70 fits directly onto 8051-family and similar 8-bit microcontroller buses as external data memory: its 32K x 8 byte-wide organization, standard CE/OE/WE controls, and 70 ns access time eliminate glue logic and keep firmware simple. Placed on the multiplexed or demultiplexed address bus with A0-A14 and DQ0-DQ7, it provides a zero-refresh volatile workspace far faster to integrate than DRAM. The 70 ns budget accommodates typical 12 MHz to 33 MHz 8051 cycles with modest wait states, and CMOS standby via CE deselect keeps idle power low in always-on controllers.
推荐
Industrial Instrumentation Data Buffer
Industrial instruments - meters, data loggers, and process controllers - use the K6X0808C1D-BF70 as a FIFO-style acquisition buffer between ADCs and slower processing or communications stages. The byte-wide 32K x 8 array holds roughly 32,000 samples, while the 70 ns asynchronous interface keeps up with moderate sampling clocks without handshake complexity. Operation in electrically noisy factory environments benefits from the fully static CMOS cell's noise margin, and tri-state DQ outputs allow the same bus to be shared with EEPROM or a real-time clock. Designers should deselect CE during power transients to protect buffer contents on supervised rails.
推荐
Battery-Backed Data Retention
Because the K6X0808C1D-BF70 is a fully static CMOS SRAM, it retains data whenever VCC remains valid, making it a natural fit for battery-backed settings, counters, and audit logs in meters, access-control panels, and medical devices. A supervisory circuit switches to a lithium cell on main-power loss while holding CE deselected, dropping the array into CMOS standby so a coin cell can hold memory contents for years - the exact figure depends on the datasheet standby current. Unlike EEPROM, writes are fast (a single WE pulse) and there is no write-endurance limit, ideal for frequently updated parameters.
推荐
Telecom and Line-Card Memory
Legacy telecom line cards, modems, and T1/E1 framer support logic used byte-wide asynchronous SRAMs such as the K6X0808C1D-BF70 for channel maps, configuration tables, and statistics counters. The 70 ns access time comfortably serves 8-bit control buses clocked at 10-20 MHz, and the 28-SOP outline conserves board area on dense cards. Tri-state I/O supports shared-memory arbitration between the framer's DMA engine and the host microcontroller using simple CE/OE gating. For maintenance of deployed telecom hardware, the same-family BF55 grade is a drop-in upgrade path where faster refresh of channel tables is needed.
推荐
Test and Measurement Equipment
Bench instruments, logic analyzers of the classic era, and automated test fixtures rely on the K6X0808C1D-BF70 as capture memory and coefficient storage. The deterministic 70 ns asynchronous timing simplifies state-machine design around sample capture - no refresh cycles can steal time from a measurement window. The 32K x 8 density suits oscilloscope-style single-channel capture at 8-bit resolution, and CMOS low standby current suits portable/handheld instruments running from batteries. Layout practice: keep address lines matched in length where capture timing matters, and decouple VCC at both corners of the 28-SOP package.
推荐
Legacy Board Repair and Last-Time Buy
Service organizations maintaining installed fleets of industrial, telecom, and medical boards designed in the 1990s-2000s use the K6X0808C1D-BF70 for component-level repair, since original designs specified this exact Samsung 28-SOP part. Sourcing from residual distributor stock (DigiKey Marketplace, Ampheo, broker channels as of 2026-09-01) keeps proven hardware in service without redesign or requalification. Recommended practice is a last-time-buy sized to the fleet's predicted failure rate, with the K6X0808C1D-BF55 held as a pin-compatible fallback - its faster 55 ns timing satisfies every 70 ns socket requirement.
推荐
推荐产品汇总
工程参考数据： K6X0808C1D-BF70 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K6X0808C1D-BF55 | K6X0808C1D-BF70T | K6X0808C1D-GF70T00 |
|---|---|---|---|---|
| Package | 28-SOP (PDSO28) | 28-SOP (PDSO28) - same | 28-SOP (PDSO28) - same | Same family, alternate package suffix - verify outline |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density / Organization | 256 Kbit / 32K x 8 | 256 Kbit / 32K x 8 | 256 Kbit / 32K x 8 | 256 Kbit / 32K x 8 |
| Access Time | 70 ns | 55 ns (faster) | 70 ns | 70 ns |
| Interface | Asynchronous parallel | Asynchronous parallel | Asynchronous parallel | Asynchronous parallel |
| Technology | CMOS | CMOS | CMOS | CMOS |
| Lifecycle Status | EOL (residual stock) | EOL (residual stock) | EOL (residual stock) | EOL (residual stock) |
关键差异点
- Fastest widely stocked grade of the K6X0808C1D BF package family for legacy sockets （对比 K6X0808C1D-GF70T00)
- Timing margin headroom via faster drop-in （对比 K6X0808C1D-BF55)
- Zero-refresh operation vs DRAM alternatives （对比 K4S510432D-UC75 (SDRAM))
设计说明
Deselect CE (hold high) through power-up and power-down transitions. CMOS SRAM cells can be corrupted or spurious writes latched if WE or CE glitch while the supply is outside the guaranteed operating range. Use a supervisor/reset IC to gate CE until the rail is stable, which is also the standard technique for battery-backup switchover. Never leave CE, OE, or WE floating - tie unused control inputs to VCC or GND through a pull resistor so the device stays deselected during firmware boot or bus reset.
Place a 0.1 uF ceramic decoupling capacitor within 3 mm of the VCC (pin 28) and GND (pin 14) pair, plus one bulk 4.7-10 uF capacitor per memory bank. On shared buses, keep the DQ0-DQ7 traces short and add series termination (22-33 ohm) near the driver if trace lengths exceed about 10 cm at fast edge rates, to control ringing on the tri-state outputs. Address lines may be routed as an unmatched group for asynchronous use, but avoid routing them adjacent to clock lines to prevent coupling-induced address errors.
Estimated: active current for a 5 V CMOS 256Kbit SRAM of this class is typically in the tens of mA range at 70 ns grade, while CMOS standby is in the microamp range per family datasheet conventions - confirm exact ICC/ISB1 values in the Samsung K6X0808C1D datasheet before finalizing the power budget. For battery-backed designs, the dominant battery drain is standby current times retention time, so keeping CE high (deselected) during idle periods extends coin-cell life by orders of magnitude versus a continuously selected device.
When interfacing to modern fast MCUs or FPGAs, remember the 70 ns tAA means a zero-wait-state 50 MHz+ bus (20 ns cycle) cannot read this part directly - insert wait states or run the memory bus at 10-14 MHz maximum. Data-float time after OE/CE deassertion must also be respected before another device drives the bus to avoid bus contention. For FPGA designs, generate the OE/WE strobes from clock edges with adequate hold margins rather than combinational address decoding alone.
合规信息
This is a legacy Samsung memory part predating modern RoHS declarations; compliance status must be confirmed with the supplier or Samsung's environmental data before use in new EU-market designs.
