K6X0808C1D-BF70T vs K6F3216U6M-EF70T 对比
详细并排对比 K6X0808C1D-BF70T 出自 Samsung Electronics 和 K6F3216U6M-EF70T 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K6X0808C1D-BF70T | K6F3216U6M-EF70T |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $6.10 |
| 存储器类型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 存储容量 | 256 Kbit | 32 Mbit |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 55 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| 工作温度 | -40C to +85C (TA) | [DATA_NEEDED: Operating Temperature Range] |
| 封装 | 28-SOP | 55-TFBGA (7.5 x 12 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| 数据总线宽度 | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | — |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | None (static memory) |
| RoHS 状态 | Compliant | NO (per third-party listing) |
| 存储组织 | — | 2M x 16 |
| 电源电压 | — | 3 V |
| 接口 | — | Parallel |
| Technology | — | Full CMOS Static RAM |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |