K6X4008C1F-MF55 vs K6X4008C1F-MF55000 对比
详细并排对比 K6X4008C1F-MF55 出自 Samsung Electronics 和 K6X4008C1F-MF55000 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K6X4008C1F-MF55000 - 512Kx8 5V Async SRAM, 55ns | Samsung
K6X4008C1F-MF55000 ✗ 停产规格对比
| 参数 | K6X4008C1F-MF55 | K6X4008C1F-MF55000 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 停产 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.70 | $6.45 |
| 存储器类型 | SRAM - Asynchronous | Asynchronous SRAM |
| 存储组织 | 512K x 8 bit | 512K x 8 |
| 存储容量 | 4 Mbit | 4 Mbit |
| Access Time | 55 ns | 55 ns |
| 接口 | Parallel | Parallel |
| 电源电压 | 5 V | 5 V |
| Technology | Full CMOS | Full CMOS |
| 封装 | TSOP2-32 (0.400 inch, REVERSE) | 32-TSOP (reverse orientation, MF) |
| 安装类型 | Surface Mount | Surface Mount |
| Data Retention | Supported, low data retention voltage/current for battery backup | Low data retention voltage supported (battery backup) |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Address Lines | 19 (A0-A18) | — |
| Data Lines | 8 (I/O1-I/O8) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Active Current | [DATA_NEEDED: typical active current] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Operating Current | — | [DATA_NEEDED: operating current] |
| I/O Type | — | TTL-compatible, 3-state |
| Density Class | — | Parallel SRAM, 4Mbit class |