K6X4008C1F-MF55 vs K6X4008C1F-MF55000 Comparison
Detailed side-by-side comparison of K6X4008C1F-MF55 by Samsung Electronics and K6X4008C1F-MF55000 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X4008C1F-MF55 - 512Kx8 4Mbit 55ns SRAM | Samsung
K6X4008C1F-MF55 ✗ End of LifeSamsung Electronics
K6X4008C1F-MF55000 - 512Kx8 5V Async SRAM, 55ns | Samsung
K6X4008C1F-MF55000 ✗ End of LifeSpecification Comparison
| Parameter | K6X4008C1F-MF55 | K6X4008C1F-MF55000 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | End of Life | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.70 | $6.45 |
| Memory Type | SRAM - Asynchronous | Asynchronous SRAM |
| Organization | 512K x 8 bit | 512K x 8 |
| Memory Size | 4 Mbit | 4 Mbit |
| Access Time | 55 ns | 55 ns |
| Interface | Parallel | Parallel |
| Supply Voltage | 5 V | 5 V |
| Technology | Full CMOS | Full CMOS |
| Package | TSOP2-32 (0.400 inch, REVERSE) | 32-TSOP (reverse orientation, MF) |
| Mounting Type | Surface Mount | Surface Mount |
| Data Retention | Supported, low data retention voltage/current for battery backup | Low data retention voltage supported (battery backup) |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Address Lines | 19 (A0-A18) | — |
| Data Lines | 8 (I/O1-I/O8) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Active Current | [DATA_NEEDED: typical active current] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Operating Current | — | [DATA_NEEDED: operating current] |
| I/O Type | — | TTL-compatible, 3-state |
| Density Class | — | Parallel SRAM, 4Mbit class |