K9XXG08U0M vs K9XXG08UXM 对比
详细并排对比 K9XXG08U0M 出自 Samsung Electronics 和 K9XXG08UXM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9XXG08U0M | K9XXG08UXM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | Obsolete | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.60 | $0.00 |
| 存储器类型 | NAND Flash | — |
| Density | 8 G-bit | — |
| 存储组织 | 1G x 8 bit | — |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| 电源电压 | 2.7 V to 3.6 V (3.3V device) | 2.7 V to 3.6 V |
| 接口 | 8-bit parallel NAND (command/address/data multiplexed) | — |
| Page Read Time | 20 us | — |
| 封装 | 48-pin TSOP-I | 48-pin TSOP |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | SLC (single-level cell) NAND |
| ECC Requirement | External ECC by host controller | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| 存储容量 | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Page Size | — | (2K + 64) Byte |
| Block Size | — | (256K + 8K) Byte |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |