M29DW323DB70N3E vs M29W160EB70N3E 对比

详细并排对比 M29DW323DB70N3E 出自 Micron Technology 和 M29W160EB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29DW323DB70N3E M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E ✓ 量产中
Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ 量产中

规格对比

参数 M29DW323DB70N3E M29W160EB70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.55 $1.76
存储器类型 Flash - NOR FLASH - NOR
Memory Format FLASH —
Technology FLASH - NOR Memory IC —
Density 32 Mb (4M x 8, 2M x 16) —
Memory Organization 4M x 8 / 2M x 16 —
接口 Parallel Parallel
Access Time 70 ns 70 ns
电源电压 3 V class (per manufacturer datasheet) —
工作温度 -40C to +125C -40C to +125C
封装 48-TSOP I —
安装类型 Surface Mount Surface Mount
Boot Block Location Bottom (DB variant) —
Byte/Word Organization Select Yes (BYTE pin) —
Applications Domain Embedded code storage / XIP —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Standard Pack Quantity [DATA_NEEDED: standard pack quantity] —
存储容量 — 16 Mbit (2M x8, 1M x16)
存储组织 — 2M x8 / 1M x16
Supply Voltage (VCC) — 2.7 V to 3.6 V
Programming Time — 10 us (typical)
Cell Type — SLC NOR
封装 / 外壳 — 48-TFSOP (0.724 in, 18.40 mm width)
Packaging — Tray
Speed Grade — -70
FBGA Code — N/A (TSOP package)
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

浏览全部产品 创建 BOM 获取报价