M29F160FB55N3E2 vs M29F160FB55N3F2 对比

详细并排对比 M29F160FB55N3E2 出自 Micron Technology 和 M29F160FB55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F160FB55N3E2 M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 ✓ 量产中
Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete

规格对比

参数 M29F160FB55N3E2 M29F160FB55N3F2
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $2.72 $5.60
存储器类型 NOR Flash - Parallel, Asynchronous Parallel NOR Flash
Density 16777 kbits (16 Mbit) 16777 kbits (16 Mbit)
存储组织 1 M x 16 / 2 M x 8 1 Mword x 16 bits / 2 Mbyte x 8 bits
Number of Words 1000 k 1000 k
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
接口 Parallel Parallel
Boot Block Bottom Boot Block (FB) —
Programming Algorithm Embedded byte/word program and erase controller —
工作温度 -40 C to +125 C -40 to +125 C
封装 48-TSOP I —
安装类型 Surface Mount Surface Mount
Packaging Tray —
RoHS 状态 ROHS3 Compliant Compliant (lead-free)
Lead Free Status Lead Free —
电源电压 — 5 V
Boot Block Architecture — Bottom Boot Block
Package Type — 48-TSOP
Termination Finish — Lead-free (F2 suffix)
Program/Erase Controller — Embedded byte/word program algorithms
Block Protection — Hardware boot block protection
Speed Grade (from MPN) — 55 (55 ns)

数据手册与资源

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