M29F400FT55N3E2 vs M29F400FT55N3F2 对比
详细并排对比 M29F400FT55N3E2 出自 Micron Technology 和 M29F400FT55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ 量产中规格对比
| 参数 | M29F400FT55N3E2 | M29F400FT55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.15 | $1.51 |
| 存储器类型 | NOR Flash (Parallel) | NOR Flash (SLC) |
| Density | 4 Mbit (512K x 8) | — |
| Access Time | 55 ns | 55 ns |
| 电源电压 | 5 V (single supply) | 5 V |
| 接口 | Parallel | Parallel |
| Boot Block Architecture | Top boot (FT variant) | — |
| 封装 | 44-SO (SOP-44) | 44-SO (SOP-44) |
| 安装类型 | Surface Mount | Surface Mount |
| Programming Supply | No 12 V VPP required (5.0 V programming) | — |
| Command Set | JEDEC standard compatible | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: min operating temperature] |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Cycles] | [DATA_NEEDED: endurance cycles] |
| Data Retention | [DATA_NEEDED: Data Retention] | — |
| Active Read Current | [DATA_NEEDED: Active Current] | — |
| Standby Current | [DATA_NEEDED: Standby Current] | — |
| Block Protection | Hardware block protection | — |
| MSL 等级 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | — |
| 存储容量 | — | 4 Mbit |
| 存储组织 | — | 256K x 16 |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |