M29W128GL70ZA3E vs M29W128GH70ZA3E 对比
详细并排对比 M29W128GL70ZA3E 出自 Micron Technology 和 M29W128GH70ZA3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W128GL70ZA3E | M29W128GH70ZA3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.25 | $2.70 |
| 存储器类型 | NOR Flash | NOR Flash |
| Density | 128 Mbit | — |
| 存储组织 | 16M x 8 / 8M x 16 | 8M x 16 |
| 接口 | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| 电源电压 | 3V / 3.3V | [DATA_NEEDED: supply voltage range] |
| 工作温度 | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| 封装 | 64-TBGA (10x13 mm) | 64-TBGA (10x13 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Boot Block Location | Bottom boot (GL variant) | — |
| Bus Width Selection | BYTE pin (x8/x16) | — |
| Packaging | Tray | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS status] |
| Product Longevity Program | No | — |
| FBGA Code | [DATA_NEEDED: FBGA Code] | — |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Endurance] | — |
| 存储容量 | — | 128 Mbit |
| Technology | — | SLC NOR |
| Boot Block Architecture | — | Bottom boot (GH suffix) |
| Program/Erase Voltage | — | [DATA_NEEDED: program/erase voltage] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| CFI Compliant | — | [DATA_NEEDED: CFI compliance] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |