M29W800FB70ZA3SF vs M29W800FB70ZA3SE 对比

详细并排对比 M29W800FB70ZA3SF 出自 Micron Technology 和 M29W800FB70ZA3SE 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W800FB70ZA3SF M29W800FB70ZA3SF - 8Mb 3V Parallel NOR Flash 70ns | Micron

M29W800FB70ZA3SF - 8Mb 3V Parallel NOR Flash 70ns | Micron

M29W800FB70ZA3SF ✓ 量产中
Micron Technology
M29W800FB70ZA3SE M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron

M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron

M29W800FB70ZA3SE Obsolete

规格对比

参数 M29W800FB70ZA3SF M29W800FB70ZA3SE
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $2.45 $1.12
Density 8 Mb (1 MB) —
Memory Organization 1M x 8 / 512K x 16 —
接口类型 Parallel —
Access Time 70 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V —
Boot Block Location Bottom boot (FB) —
封装 48-TFBGA (6x8) 48-TFBGA (6 x 8 mm)
Ball Pitch [DATA_NEEDED: ball pitch] —
工作温度 -40C to +125C [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount
Byte/Word Organization Pin Yes (BYTE pin selects x8/x16) —
Programming Time [DATA_NEEDED: programming time] —
Data Retention [DATA_NEEDED: data retention] —
Endurance [DATA_NEEDED: program/erase cycles] —
XIP Support Yes (parallel random-access, execute-in-place capable) —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Reel Option Available (M29W800FB70ZA3SF TR) —
存储器类型 — NOR Flash, Parallel
存储容量 — 8 Mbit
存储组织 — 1 M x 8 / 512 K x 16
电源电压 — 3 V / 3.3 V (2.7 V to 3.6 V class)
Technology — SLC NOR
Boot Block Architecture — Bottom boot block (FB)
接口 — Parallel, address/data bus
Qualification — AEC-Q100 automotive
Packaging — Tray
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]
Active Read Current — [DATA_NEEDED: ICC read]
Standby Current — [DATA_NEEDED: ICC standby]
Moisture Sensitivity Level — [DATA_NEEDED: MSL]

数据手册与资源

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