MT40A256M16LY-062E vs NT5AD512M16C4-JRU 对比
详细并排对比 MT40A256M16LY-062E 出自 Micron Technology 和 NT5AD512M16C4-JRU 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 量产中规格对比
| 参数 | MT40A256M16LY-062E | NT5AD512M16C4-JRU |
|---|---|---|
| 品牌 | Micron Technology | Nanya Technology |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.30 | $83.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 256M x16 | 512M x 16 |
| 接口 | Parallel | CMOS, DDR4 |
| Clock Frequency | 1.6 GHz | 1600 MHz (3200 Mbps data rate) |
| Access Time (tAA) | 19 ns | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Data Rate Class | DDR4-2666 (062E speed grade) | — |
| 封装 | 96-FBGA (7.5 x 13.5 mm) | 96-ball FBGA (PBGA96) |
| 安装类型 | Surface Mount | Surface Mount |
| Operating Temperature (IT variant) | -40C to +95C | — |
| Auto Self-Refresh | Yes | Yes |
| Auto Precharge | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC (Command/Address) | Yes | — |
| Data Mask (DM) | Yes | Yes |
| Dynamic On-Chip Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| FBGA Code | D9XSG (AUT variant) | — |
| RoHS 状态 | Compliant (F = RoHS/lead-free finish) | Green Product (per Nanya product page) |
| Density | — | 8 Gbit |
| CAS Latency (CL) | — | 22 at 1600 MHz |
| 工作温度 | — | -40 C to +95 C (industrial grade) |
| Built-in Temperature Sensor | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |