MT40A256M16LY-062E vs NT5AD512M16C4-JRU Comparison

Detailed side-by-side comparison of MT40A256M16LY-062E by Micron Technology and NT5AD512M16C4-JRU by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A256M16LY-062E MT40A256M16LY-062E - 4Gb DDR4 SDRAM x16 | Micron

MT40A256M16LY-062E - 4Gb DDR4 SDRAM x16 | Micron

MT40A256M16LY-062E ✓ Active
Nanya Technology
NT5AD512M16C4-JRU NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya

NT5AD512M16C4-JRU ✓ Active

Specification Comparison

Parameter MT40A256M16LY-062E NT5AD512M16C4-JRU
Brand Micron Technology Nanya Technology
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.30 $83.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 4 Gbit —
Organization 256M x16 512M x 16
Interface Parallel CMOS, DDR4
Clock Frequency 1.6 GHz 1600 MHz (3200 Mbps data rate)
Access Time (tAA) 19 ns —
Supply Voltage (VDD) 1.2 V 1.2 V
Data Rate Class DDR4-2666 (062E speed grade) —
Package 96-FBGA (7.5 x 13.5 mm) 96-ball FBGA (PBGA96)
Mounting Type Surface Mount Surface Mount
Operating Temperature (IT variant) -40C to +95C —
Auto Self-Refresh Yes Yes
Auto Precharge Yes Yes
Write Leveling Yes Yes
CRC (Command/Address) Yes —
Data Mask (DM) Yes Yes
Dynamic On-Chip Termination (ODT) Yes Yes
ZQ Calibration Yes Yes
FBGA Code D9XSG (AUT variant) —
RoHS Status Compliant (F = RoHS/lead-free finish) Green Product (per Nanya product page)
Density — 8 Gbit
CAS Latency (CL) — 22 at 1600 MHz
Operating Temperature — -40 C to +95 C (industrial grade)
Built-in Temperature Sensor — Yes
Asynchronous Reset — Yes
CRC Function — Yes

Datasheets & Resources

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