MT40A2G8AG-062E vs K4AAG085WM-BCWE 对比
详细并排对比 MT40A2G8AG-062E 出自 Micron Technology 和 K4AAG085WM-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A2G8AG-062E | K4AAG085WM-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.75 | $7.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 存储组织 | 2G x 8 | 2G x 8 |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| CAS 延迟 | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| 封装 | 78-FBGA (7.5 x 11 mm) | 78FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Die Revision | AG (current generation) | — |
| 数据速率 | — | 3200 Mbps (DDR4-3200) |
| 电源电压 | — | 1.2 V |
| 工作温度 | — | 0C to +85C |
| 接口 | — | DDR4 (JEDEC-standard) |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |