MT40A512M16LY-075 vs H5AN8G6NDJR-XNC 对比
详细并排对比 MT40A512M16LY-075 出自 Micron Technology 和 H5AN8G6NDJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M16LY-075 | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $27.89 | $55.68 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 存储组织 | 512M x 16 | — |
| Clock Speed | 1.33 GHz | — |
| 数据速率 | DDR4-2666 | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Internal Banks (x16) | 8 (2 groups of 4 banks) | — |
| Refresh Time at TC -40°C to 85°C | 64ms | — |
| Refresh Time at TC >85°C to 95°C | 32ms | — |
| Refresh Time at TC >95°C to 105°C | 16ms | — |
| 封装 | 96-FBGA (7.5x13.5 mm) | FBGA-96 (13x7.5 mm) |
| 工作温度范围 | 0°C to +95°C | — |
| 安装类型 | Surface Mount | — |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |