MT40A512M16LY-075 - 8Gb DDR4 SDRAM 512Mx16 | Micron
料号： MT40A512M16LY-075 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $47.8125 | $47.81 |
| 10 | $34.5313 | $345.31 |
| 100 | $30.5469 | $3,054.69 |
| 500 | $29.2188 | $14,609.40 |
| 1,000 | $27.8906 | $27,890.60 |
MT40A512M16LY-075 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower voltage, and increased density. DDR4 is a critical component in modern computing systems, providing the main memory for CPUs, GPUs, and other processors. It is part of the memory hierarchy that includes SRAM, DRAM, and storage, with DRAM serving as the primary working memory for executing programs and processing data.
Key features of the MT40A512M16LY-075 include on-die, internal, adjustable VREFDQ generation, 1.2V pseudo open-drain I/O, and programmable data strobe preambles. It supports a refresh time of 8192 cycles at TC temperature range: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. The device has 16 internal banks (x16: 2 groups of 4 banks each) and is designed for high-reliability applications.
The architecture of this DDR4 SDRAM includes advanced features such as on-die termination (ODT), write leveling, and read/write training, which enhance signal integrity at high speeds. The 1.2V operating voltage reduces power consumption by approximately 20% compared to DDR3, making it ideal for energy-efficient systems. The 96-ball FBGA package with a 7.5x13.5 mm footprint is optimized for space-constrained PCB designs.
Typical applications include servers, data centers, networking equipment, industrial computing, and high-end consumer electronics. The high density and speed make it suitable for memory-intensive tasks such as virtualization, big data analytics, and real-time signal processing. The device's low power and high reliability also make it a preferred choice for automotive and embedded systems.
When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize power supply noise. Additionally, follow the PCB layout guidelines in the Micron datasheet to maintain signal integrity at DDR4-2666 speeds, including controlled impedance traces and proper termination.
直接替换替代料： MT40A512M16LY-075 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT40A512M16LY-075 （相同外形与封装尺寸） ——差异在于 Data Rate, Density, Package.
快速对比工具——选择替代料号进行并排对比：
MT40A512M16LY-075:E
✓ 有现货
$5.8 / 个
查看数据手册 →MT40A512M16TB-062E:R
✓ 有现货
$60 / 个
查看数据手册 →MT40A512M16JY-07EAIT:B
✓ 有现货
$8.1 / 个
查看数据手册 →H5AN8G6NDJR-XNC
✓ 有现货
$55.6818 / 个
查看数据手册 →K4A8G165WB-BCTD
✓ 有现货
$37 / 个
查看数据手册 →NT5AD512M16C4-JR
✓ 有现货
$73.75 / 个
查看数据手册 →MT40A512M16LY-075 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 8 Gbit |
| 存储组织 | 512M x 16 |
| Clock Speed | 1.33 GHz |
| 数据速率 | DDR4-2666 |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply | 2.5V (-125mV, +250mV) |
| I/O Type | 1.2V pseudo open-drain |
| Internal Banks (x16) | 8 (2 groups of 4 banks) |
| Refresh Time at TC -40°C to 85°C | 64ms |
| Refresh Time at TC >85°C to 95°C | 32ms |
| Refresh Time at TC >95°C to 105°C | 16ms |
| 封装 | 96-FBGA (7.5x13.5 mm) |
| 工作温度范围 | 0°C to +95°C |
| 安装类型 | Surface Mount |
MT40A512M16LY-075 引脚配置
| 引脚 A1 | VDD — Power supply |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDDQ — I/O power supply |
| 引脚 A8 | DQ4 — Data input/output 4 |
| 引脚 A9 | DQ5 — Data input/output 5 |
| 引脚 A10 | VSS — Ground |
| 引脚 A11 | DQ6 — Data input/output 6 |
| 引脚 A12 | DQ7 — Data input/output 7 |
| 引脚 B1 | VPP — Programming power supply |
| 引脚 B2 | DQS0 — Data strobe 0 |
| 引脚 B3 | DQS0# — Data strobe 0 complement |
| 引脚 B4 | VSS — Ground |
| 引脚 B5 | DM0 — Data mask 0 |
| 引脚 B6 | VDDQ — I/O power supply |
| 引脚 B7 | DQS1 — Data strobe 1 |
| 引脚 B8 | DQS1# — Data strobe 1 complement |
| 引脚 B9 | VSS — Ground |
| 引脚 B10 | DM1 — Data mask 1 |
| 引脚 B11 | VDDQ — I/O power supply |
| 引脚 B12 | NC — No connect |
典型应用
MT40A512M16LY-075 适用于 6 应用s: Server Memory, Networking Equipment, Industrial Computing, Automotive Infotainment, Consumer Electronics, Data Center Storage.
Server Memory
The MT40A512M16LY-075 provides high-density, high-bandwidth memory for servers, supporting virtualization, cloud computing, and big data analytics. Its 8Gb density and DDR4-2666 speed enable efficient multitasking and fast data processing. The low 1.2V operation reduces power consumption in data centers, lowering cooling costs. With 16 internal banks, it offers high concurrency for multi-threaded workloads. When used in server DIMMs, it pairs with DDR4 controllers and ECC logic to ensure data integrity. The 96-FBGA package allows for compact module designs, maximizing memory capacity per server.
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Networking Equipment
In networking equipment such as routers, switches, and firewalls, the MT40A512M16LY-075 provides fast packet buffering and routing table storage. Its DDR4-2666 speed ensures low latency for high-throughput data forwarding. The 8Gb density supports large routing tables and connection tracking. The 1.2V operation is ideal for power-sensitive networking devices. The device's on-die termination and programmable preambles enhance signal integrity in high-speed backplanes. It is commonly used alongside network processors and ASICs, with companion parts like the MT40A512M16TB-062E:R for higher speed requirements.
推荐
Industrial Computing
The MT40A512M16LY-075 is suitable for industrial PCs, PLCs, and embedded systems that require reliable memory in harsh environments. Its operating temperature range of 0°C to +95°C covers most industrial applications. The high density and speed support real-time data acquisition and control algorithms. The low power consumption is beneficial for fanless designs. The device's robust design ensures long-term reliability. It is often paired with industrial-grade processors and storage, such as the STM32H747BGT6 for control applications, and the MT41K256M16HA-125 for legacy DDR3 systems.
推荐
Automotive Infotainment
In automotive infotainment systems, the MT40A512M16LY-075 provides memory for navigation, multimedia, and connectivity features. Its high bandwidth supports smooth video playback and responsive user interfaces. The 8Gb density allows for large map databases and media storage. The device's low power consumption is critical for automotive battery life. It operates reliably in the temperature range typical of cabin environments. It is used alongside automotive-grade processors and memory controllers, such as the STM32F746BET6 for display control, and the MT40A512M16JY-07EAIT:B for extended temperature requirements.
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Consumer Electronics
The MT40A512M16LY-075 is used in high-end consumer electronics such as gaming consoles, smart TVs, and set-top boxes. Its DDR4-2666 speed provides fast data access for gaming and streaming applications. The 8Gb density supports large game assets and 4K video buffering. The low 1.2V operation reduces heat generation, enabling slim designs. The device's high reliability ensures long product life. It is typically paired with application processors and graphics chips, such as the XC7Z020 for FPGA-based acceleration, and the K4A8G165WB-BCTD as a cross-brand alternative.
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Data Center Storage
In data center storage systems, the MT40A512M16LY-075 is used in NVMe SSDs and storage controllers for caching and metadata management. Its high speed and density enable fast data access and improved IOPS. The low power consumption is critical for large-scale storage arrays. The device's reliability ensures data integrity in 24/7 operation. It is often paired with storage controllers and FPGAs, such as the XCKU5P-2FFVB676I for high-performance processing, and the MT40A512M16TB-062E:R for higher speed caching.
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推荐产品汇总
工程参考数据： MT40A512M16LY-075 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A512M16LY-075 | MT40A512M16TB-062E | MT40A512M16JY-07EAIT | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD | NT5AD512M16C4-JR |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5 mm) | E: 96-FBGA (7.5x13.5 mm) | R: 96-FBGA (7.5x13.5 mm) | B: 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13.5 mm) |
| Brand | Micron Technology | E: Micron Technology | R: Micron Technology | B: Micron Technology | SK Hynix | Samsung Electronics | Nanya Technology |
| Density | 8 Gbit | E: 8 Gbit | R: 8 Gbit | B: 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | E: 512M x 16 | R: 512M x 16 | B: 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | DDR4-2666 | E: DDR4-2666 | R: DDR4-3200 | B: DDR4-3200 | DDR4-3200 | DDR4-2666 | DDR4-2666 |
| Supply Voltage | 1.2V | E: 1.2V | R: 1.2V | B: 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | E: 0°C to +95°C | R: 0°C to +95°C | B: -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Internal Banks | 8 (x16) | E: 8 (x16) | R: 8 (x16) | B: 8 (x16) | 8 (x16) | 8 (x16) | 8 (x16) |
关键差异点
- High density 8Gb in x16 organization （对比 MT41K256M16HA-125 (DDR3))
- DDR4-2666 speed with 1.33 GHz clock （对比 MT40A512M16TB-062E:R (DDR4-3200))
- Commercial temperature range 0°C to +95°C （对比 MT40A512M16JY-07EAIT:B (industrial))
设计说明
For DDR4-2666 operation, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command traces. Use a 4-layer or more PCB with solid ground and power planes. Keep trace lengths matched within +/- 10 mils for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow Micron's layout guidelines in the datasheet for optimal signal integrity.
The MT40A512M16LY-075 has a maximum operating temperature of +95°C. Ensure adequate airflow or heatsinking in high-ambient environments. The power dissipation depends on activity and temperature; typical DDR4 modules dissipate 2-4W. Use thermal vias under the FBGA package to improve heat transfer to the PCB. Monitor the case temperature during operation to stay within the specified range.
Do not mix DDR4 with DDR3 in the same design; they are not pin-compatible. Ensure the memory controller supports DDR4-2666 speed grade. Verify the VPP supply (2.5V) is within the specified tolerance (-125mV, +250mV). Incorrect VREFDQ calibration can cause data errors; use the on-die adjustable VREFDQ feature. Also, ensure proper termination on DQS and address lines to avoid signal reflections.
合规信息
Micron products are generally RoHS compliant. Specific compliance details are available in the datasheet.
