MT40A512M16TB-062E:R vs K4A8G085WB-BIWE 对比
详细并排对比 MT40A512M16TB-062E:R 出自 Micron Technology 和 K4A8G085WB-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ 量产中
规格对比
| 参数 | MT40A512M16TB-062E:R | K4A8G085WB-BIWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $60.00 | $6.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit (512M x 16) | 8 Gb |
| 数据速率 | 3200 MT/s | 3200 Mbps |
| Clock Frequency | 1600 MHz | — |
| CAS 延迟 | 22 | [DATA_NEEDED: CL value] |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| 工作温度 | 0°C to +95°C | 0°C to +85°C |
| 封装 | 96-FBGA (7.5x13 mm) | 78-FBGA |
| 接口 | Parallel | — |
| 数据总线宽度 | 16 bits | — |
| Refresh Time | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| 特性 | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| RoHS 状态 | Compliant | Compliant |
| Memory Organization | — | 1G x 8 |
| 电源电压 | — | 1.2 V |
| 安装类型 | — | Surface Mount |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |