MT40A512M16TB-062E:R vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of MT40A512M16TB-062E:R by Micron Technology and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ Active
Specification Comparison
| Parameter | MT40A512M16TB-062E:R | K4A8G085WB-BIWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $60.00 | $6.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | 8 Gb |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Clock Frequency | 1600 MHz | — |
| CAS Latency | 22 | [DATA_NEEDED: CL value] |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Operating Temperature | 0°C to +95°C | 0°C to +85°C |
| Package | 96-FBGA (7.5x13 mm) | 78-FBGA |
| Interface | Parallel | — |
| Data Bus Width | 16 bits | — |
| Refresh Time | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Features | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| RoHS Status | Compliant | Compliant |
| Memory Organization | — | 1G x 8 |
| Supply Voltage | — | 1.2 V |
| Mounting Type | — | Surface Mount |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |