MT40A512M16TB-062E:R vs MT40A512M16TB-062E:J 对比
详细并排对比 MT40A512M16TB-062E:R 出自 Micron Technology 和 MT40A512M16TB-062E:J 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ 量产中
规格对比
| 参数 | MT40A512M16TB-062E:R | MT40A512M16TB-062E:J |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $60.00 | $8.10 |
| 存储器类型 | DDR4 SDRAM | SDRAM - DDR4 |
| 存储容量 | 8 Gbit (512M x 16) | 8Gbit (512M x 16) |
| 数据速率 | 3200 MT/s | — |
| Clock Frequency | 1600 MHz | 1.6 GHz |
| CAS 延迟 | 22 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| 工作温度 | 0°C to +95°C | — |
| 封装 | 96-FBGA (7.5x13 mm) | 96-FBGA (7.5x13.5 mm) |
| 接口 | Parallel | — |
| 数据总线宽度 | 16 bits | — |
| Refresh Time | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| I/O Type | 1.2V pseudo open-drain | 1.2V pseudo open-drain |
| 特性 | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| RoHS 状态 | Compliant | Compliant |
| Access Time | — | 19 ns |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Internal Banks (x16) | — | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | — | 8n-bit |
| 工作温度范围 | — | 0°C to 95°C |
| Lead-Free | — | Yes |
| 安装类型 | — | Surface Mount |