MT41K256M16HA-125 vs H5TC4G63AFR-PBI 对比

详细并排对比 MT41K256M16HA-125 出自 Micron Technology 和 H5TC4G63AFR-PBI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K256M16HA-125 MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 ✓ 量产中
SK hynix
H5TC4G63AFR-PBI H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete

规格对比

参数 MT41K256M16HA-125 H5TC4G63AFR-PBI
品牌 Micron Technology SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $6.36 $6.50
存储器类型 SDRAM - DDR3L DDR3L SDRAM
存储容量 4Gbit (256M x 16) —
数据总线宽度 16 bit —
Clock Frequency 800 MHz —
Access Time 13.75 ns —
电源电压 1.35 V 1.35 V
封装 96-FBGA (9x14 mm) 96-ball FBGA (TFBGA, BGA96, 9x16, 32)
引脚数 96 —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Logic Family CMOS —
Refresh Interval 7.8 us at 85C —
CAS 延迟 11 Programmable
存储组织 — 256M x 16
Total Memory Size — 4 Gb
数据速率 — DDR3-1600 (PC3L-12800)
Number of Banks — 8
Burst Length — 8 (BL8)
On-Die Termination (ODT) — Yes
Refresh Period — 7.8 us at 85°C
工作温度范围 — -40°C to +95°C
Number of Terminals — 96

数据手册与资源

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