MT41K256M16HA-125:E vs H5AN8G6NCJR-XXC 对比
详细并排对比 MT41K256M16HA-125:E 出自 Micron Technology 和 H5AN8G6NCJR-xxC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT41K256M16HA-125:E | H5AN8G6NCJR-xxC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 8 Gb |
| 存储组织 | 256M x 16 | 512M x 16 |
| Clock Frequency | 800 MHz | — |
| CAS 延迟 | 13.75 ns | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L) | 1.2 V |
| Supply Voltage (VDDQ) | 1.35 V | — |
| 封装 | 96-FBGA (9x14 mm) | 96-ball FBGA |
| 引脚数 | 96 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | 0°C to +95°C (TC) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | Yes |
| 数据总线宽度 | 16 bits | — |
| Logic Family | CMOS | — |
| 数据速率 | — | 2666 Mbps (VKC speed grade) |
| VPP Supply | — | 2.5 V |
| Operating Temperature (TC) | — | 0°C to 95°C |
| Number of Banks | — | 8 |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination (ODT) | — | Supported |
| Self-Refresh | — | Temperature-compensated (TCSR) |
| RoHS | — | Compliant |