MT41K256M16MTW-107IT vs K4B4G1646E-BYK0 对比
详细并排对比 MT41K256M16MTW-107IT 出自 Micron Technology 和 K4B4G1646E-BYK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT41K256M16MTW-107IT | K4B4G1646E-BYK0 |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.50 | $1.80 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gbit (256M x 16) | — |
| Clock Speed | 933 MHz | — |
| 数据总线宽度 | 16 bit | — |
| 电源电压 | 1.35 V | 1.35 V (1.283 V to 1.45 V) |
| Row Cycle Time (tRC) | 20 ns | — |
| CAS 延迟 | 13 | 11 (CL-tRCD-tRP) |
| 工作温度范围 | -40°C to +95°C | — |
| 封装 | 96-FBGA (8x14 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| 安装类型 | Surface Mount | — |
| 接口 | Parallel | — |
| Access Time | 0.195 ns | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Technology | CMOS | — |
| Density | — | 4 Gb |
| 存储组织 | — | 256M x 16 |
| 数据速率 | — | DDR3-1600 (800 MHz) |
| 工作温度 | — | 0°C to +95°C (TC) |
| Burst Length | — | 8 (fixed), 4 (burst chop) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |