MT41K256M16MTW-107IT vs K4B4G1646E-BYK0 Comparison
Detailed side-by-side comparison of MT41K256M16MTW-107IT by Micron Technology and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16MTW-107IT - 4Gb DDR3L SDRAM 933MHz | Micron
MT41K256M16MTW-107IT ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16MTW-107IT | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit (256M x 16) | — |
| Clock Speed | 933 MHz | — |
| Data Bus Width | 16 bit | — |
| Supply Voltage | 1.35 V | 1.35 V (1.283 V to 1.45 V) |
| Row Cycle Time (tRC) | 20 ns | — |
| CAS Latency | 13 | 11 (CL-tRCD-tRP) |
| Operating Temperature Range | -40°C to +95°C | — |
| Package | 96-FBGA (8x14 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Mounting Type | Surface Mount | — |
| Interface | Parallel | — |
| Access Time | 0.195 ns | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Technology | CMOS | — |
| Density | — | 4 Gb |
| Organization | — | 256M x 16 |
| Data Rate | — | DDR3-1600 (800 MHz) |
| Operating Temperature | — | 0°C to +95°C (TC) |
| Burst Length | — | 8 (fixed), 4 (burst chop) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |