MT41K256M16TW-107 vs MT41K256M16LY-107 对比
详细并排对比 MT41K256M16TW-107 出自 Micron Technology 和 MT41K256M16LY-107 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT41K256M16TW-107 | MT41K256M16LY-107 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $14.10 | $2.25 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gbit | 4Gbit (256M x 16) |
| 存储组织 | 256M x 16 | — |
| 接口 | Parallel | — |
| Clock Frequency | 933 MHz (DDR3L-1866) | 933 MHz |
| Access Time | 20 ns | — |
| 电源电压 | 1.35 V | 1.35V / 1.5V |
| 数据总线宽度 | 16 bit | 16 bit |
| 封装 | 96-FBGA (8x14 mm) | 96-FBGA (7.5x13.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +95C (commercial :P grade) | [DATA_NEEDED: operating temperature range] |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| CAS 延迟 | — | 20 ns |
| 数据速率 | — | 1866 MT/s |
| Burst Length | — | 8, 4 |
| 引脚数 | — | 96 |
| REACH Status | — | Compliant |
| Memory Format | — | DRAM |