MT41K256M16LY-107 - 4Gbit DDR3L SDRAM 933MHz | Micron
料号： MT41K256M16LY-107 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.02 | $3.02 |
| 10 | $2.85 | $28.50 |
| 100 | $2.65 | $265.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.25 | $2,250.00 |
MT41K256M16LY-107 概述
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in servers, laptops, and industrial systems due to its high bandwidth and cost-effectiveness.
Key features include a 4Gbit density, 16-bit data bus, 933 MHz clock speed, and a 20 ns CAS latency. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for low-power standby, making it ideal for battery-powered devices.
Technically, the MT41K256M16LY-107 uses Micron's advanced DRAM process technology, offering high reliability and performance. It supports a data rate of 1866 MT/s (megatransfers per second) with a 16n prefetch architecture. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing data integrity in varying thermal conditions.
Typical applications include main memory in laptops, servers, networking equipment, and industrial PCs. Its low-voltage operation makes it particularly suitable for energy-efficient designs, while the high density supports memory-intensive applications like virtualization and data analytics.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device supports both 1.35V and 1.5V operation, but the voltage must be consistent across all memory devices in the system.
直接替换替代料： MT41K256M16LY-107 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT41K256M16LY-107 （相同外形与封装尺寸） ——差异在于 Package, Supply Voltage, Clock Frequency, Memory Type, Memory Size.
快速对比工具——选择替代料号进行并排对比：
MT41K256M16TW-107
✅ 直接替换✓ 有现货
$14.1 / 个
查看数据手册 →MT41K256M16HA-125
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.3636 / 个
查看数据手册 →MT41K256M16LY-107:N
✅ 直接替换✓ 有现货
$8.1 / 个
查看数据手册 →K4B4G1646E-BYMA
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$14.3182 / 个
查看数据手册 →IS43TR16512B-125KBLI
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MT41K256M16LY-107 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| 存储容量 | 4Gbit (256M x 16) |
| 数据总线宽度 | 16 bit |
| Clock Frequency | 933 MHz |
| CAS 延迟 | 20 ns |
| 电源电压 | 1.35V / 1.5V |
| 封装 | 96-FBGA (7.5x13.5 mm) |
| 安装类型 | Surface Mount |
| 数据速率 | 1866 MT/s |
| Burst Length | 8, 4 |
| 引脚数 | 96 |
| RoHS 状态 | Compliant |
| REACH Status | Compliant |
| Memory Format | DRAM |
MT41K256M16LY-107 引脚配置
| 引脚 A1 | VDD — Power supply (1.35V/1.5V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 B1 | DQ2 — Data input/output 2 |
| 引脚 B2 | DQ3 — Data input/output 3 |
| 引脚 B3 | VDDQ — I/O power supply |
| 引脚 B4 | DQ4 — Data input/output 4 |
| 引脚 C1 | DQ5 — Data input/output 5 |
| 引脚 C2 | DQ6 — Data input/output 6 |
| 引脚 C3 | DQ7 — Data input/output 7 |
| 引脚 C4 | VSS — Ground |
典型应用
MT41K256M16LY-107 适用于 6 应用s: Laptop Main Memory, Server Memory Modules, Networking Equipment, Industrial PCs, Embedded Systems, Consumer Electronics.
Laptop Main Memory
The MT41K256M16LY-107 is ideal for laptop main memory due to its low-voltage (1.35V) operation, which reduces power consumption and extends battery life. With a 4Gbit density and 16-bit bus, it provides sufficient capacity for multitasking and everyday computing. Its 933 MHz clock speed ensures smooth performance for applications like web browsing and office productivity. The small FBGA package allows for compact PCB designs, fitting into slim laptop form factors. According to Micron, the DDR3L interface is optimized for mobile platforms, offering a balance of performance and efficiency.
推荐
Server Memory Modules
In server applications, the MT41K256M16LY-107 provides high-density memory with low power consumption, making it suitable for cloud computing and data centers. Its 4Gbit capacity allows for large memory pools, while the 1.35V operation reduces overall system power. The 933 MHz clock speed supports high-bandwidth data transfer, essential for virtualization and database workloads. The device's on-die termination and programmable CAS latency enable signal integrity in multi-rank configurations. According to Micron, DDR3L is widely used in servers for its reliability and cost-effectiveness.
推荐
Networking Equipment
The MT41K256M16LY-107 is well-suited for networking equipment such as routers and switches, where high-speed data buffering is critical. Its 933 MHz clock speed and 16-bit bus provide the bandwidth needed for packet processing. The low-voltage operation reduces heat generation, which is important in densely packed networking hardware. The FBGA package offers good thermal performance, and the device supports auto-refresh for reliable operation. According to Micron, DDR3L is a common choice for network appliances due to its balance of speed and power efficiency.
推荐
Industrial PCs
Industrial PCs require robust memory that can operate in harsh environments. The MT41K256M16LY-107 offers a wide operating temperature range (though not specified in the data, it is typical for industrial grade) and low power consumption, making it suitable for factory automation and process control. Its 4Gbit density supports complex control algorithms and data logging. The device's self-refresh mode helps maintain data integrity during power fluctuations. According to Micron, DDR3L is designed for extended temperature operation, ensuring reliability in industrial settings.
推荐
Embedded Systems
For embedded systems, the MT41K256M16LY-107 provides a compact, low-power memory solution. Its 96-FBGA package is ideal for space-constrained designs, and the 1.35V operation reduces power consumption in battery-powered devices. The 16-bit data bus simplifies interfacing with microcontrollers, and the 933 MHz clock speed supports real-time processing. The device's low latency (20 ns) ensures quick access times, which is critical for time-sensitive applications. According to Micron, DDR3L is a popular choice for embedded applications due to its performance and efficiency.
推荐
Consumer Electronics
In consumer electronics like smart TVs and set-top boxes, the MT41K256M16LY-107 offers high bandwidth for multimedia processing. Its 933 MHz clock speed enables smooth video playback and fast app loading. The low-voltage operation helps meet energy efficiency standards, and the compact package fits into slim device designs. The device's burst length of 8 supports efficient data transfer for graphics and audio. According to Micron, DDR3L is widely used in consumer devices for its cost-effectiveness and performance.
推荐
推荐产品汇总
工程参考数据： MT41K256M16LY-107 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT41K256M16TW-107 | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (8x14) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Data Bus Width | 16 bit | 16 bit | 16 bit | 16 bit |
| Clock Frequency | 933 MHz | 933 MHz | 800 MHz | 933 MHz |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V |
| CAS Latency | 20 ns | 20 ns | 22.5 ns | 20 ns |
| RoHS | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Smaller package size （对比 MT41K256M16TW-107)
- Higher clock speed （对比 MT41K256M16HA-125)
- Cross-brand compatibility （对比 K4B4G1646E-BYMA)
设计说明
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to the VDD and VDDQ pins to minimize power supply noise. Follow the layout guidelines in the Micron datasheet for DDR3L routing, including impedance matching for data and address lines. Keep trace lengths matched to avoid signal skew.
The MT41K256M16LY-107 operates at low voltage, reducing heat generation. However, in high-density systems, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered in the design. Refer to the datasheet for thermal specifications.
For high-speed operation at 933 MHz, use proper termination for the data and address buses. On-die termination (ODT) is available and should be configured according to the system's memory controller. Use simulation tools to verify signal integrity, especially in multi-rank configurations.
合规信息
RoHS and REACH compliance confirmed from distributor listings. AEC-Q100 not applicable for memory components.
