MX30LF4GE8AB vs K9F4G08U0B-PCB0 对比

详细并排对比 MX30LF4GE8AB 出自 Macronix 和 K9F4G08U0B-PCB0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9F4G08U0B-PCB0 K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 ✓ 量产中

规格对比

参数 MX30LF4GE8AB K9F4G08U0B-PCB0
品牌 Macronix Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.98 $3.40
存储器类型 NAND Flash (SLC) NAND Flash (SLC, asynchronous)
Density 4 Gbit (512 M x 8) 4 Gbit (512 MB)
Operating Voltage (VCC) 2.7 V to 3.6 V —
接口 Parallel (asynchronous) 8-bit multiplexed NAND I/O
Access Time 20 ns —
Page Size 2112 bytes (2048 + 64 spare) (2 K + 64) byte
Block Size 64 pages (128 KB + 4 KB spare) (128 K + 4 K) byte
Bus Width 8-bit (multiplexed I/O) —
Standard Compliance ONFI 1.0 —
Program/Erase Cycles [DATA_NEEDED: P/E endurance cycles] —
Data Retention [DATA_NEEDED: retention years] —
封装 48-pin TSOP Type-I (48-TSOP) TSOP1-48 (12 mm x 20 mm, lead-free)
工作温度 -40C to +85C (industrial) —
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant Lead-free (Pb-free), RoHS compliant
Status Polling R/B# open-drain output —
存储组织 — (512M + 16M) x 8 bit
Data Register — (2K + 64) x 8 bit
Supply Voltage (VCC) — 2.7 V to 3.6 V
Operating Temperature (commercial) — 0C to +70C
Program/Erase — Automatic, on-chip page buffer
ECC Requirement — External (1-bit/512B minimum, 4-bit recommended)
Package Suffix Code — -PCB0 (TSOP1, 3.3 V, commercial, lead-free)

数据手册与资源

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