NT5CC256M16CP-DIA vs H5TC4G63AFR-PBA 对比

详细并排对比 NT5CC256M16CP-DIA 出自 Nanya Technology 和 H5TC4G63AFR-PBA 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Nanya Technology
NT5CC256M16CP-DIA NT5CC256M16CP-DIA - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CP-DIA - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CP-DIA ✓ 量产中
SK hynix
H5TC4G63AFR-PBA H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA ✓ 量产中

规格对比

参数 NT5CC256M16CP-DIA H5TC4G63AFR-PBA
品牌 Nanya Technology SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.90 $3.98
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储容量 4 Gbit (256M x 16) —
数据速率 1600 Mbps (800 MHz clock) 1866 Mbps (PC3L-14900)
电源电压 1.35 V (1.283 V to 1.45 V) —
封装 TFBGA-96 (9 x 13 mm, 0.8 mm pitch) 96-ball FBGA
Number of Banks 8 8
CAS Latency (CL) 11, 12, 13 11, 12, 13
Write Latency (CWL) 5, 6, 7, 8, 9 —
Access Time (tAC) 0.225 ns —
工作温度范围 -40°C to +95°C (industrial), -40°C to +105°C (automotive) 0°C to +95°C (Tcase)
RoHS Compliant Compliant
无卤 Yes —
安装类型 Surface Mount —
Differential Clock Input Yes (CK, CK#) —
On-Die Termination (ODT) Yes Yes
Density — 4Gb
存储组织 — 256M x 16
Supply Voltage (VDD/VDDQ) — 1.35V
Ball Pitch — 0.8mm
Burst Length — 8 and 4 (with burst chop)
接口 — 16-bit I/O
ZQ Calibration — Yes
Write Leveling — Yes
Auto Self-Refresh — Yes
Partial Array Self-Refresh — Yes

数据手册与资源

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