NT5CC256M16CP-DIA vs H5TC4G63AFR-PBA Comparison

Detailed side-by-side comparison of NT5CC256M16CP-DIA by Nanya Technology and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5CC256M16CP-DIA

NT5CC256M16CP-DIA - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CP-DIA βœ“ Active
SK hynix
H5TC4G63AFR-PBA H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA βœ“ Active

Specification Comparison

Parameter NT5CC256M16CP-DIA H5TC4G63AFR-PBA
Brand Nanya Technology SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.90 $3.98
Memory Type DDR3L SDRAM DDR3L SDRAM
Memory Size 4 Gbit (256M x 16) β€”
Data Rate 1600 Mbps (800 MHz clock) 1866 Mbps (PC3L-14900)
Supply Voltage 1.35 V (1.283 V to 1.45 V) β€”
Package TFBGA-96 (9 x 13 mm, 0.8 mm pitch) 96-ball FBGA
Number of Banks 8 8
CAS Latency (CL) 11, 12, 13 11, 12, 13
Write Latency (CWL) 5, 6, 7, 8, 9 β€”
Access Time (tAC) 0.225 ns β€”
Operating Temperature Range -40Β°C to +95Β°C (industrial), -40Β°C to +105Β°C (automotive) 0Β°C to +95Β°C (Tcase)
RoHS Compliant Compliant
Halogen Free Yes β€”
Mounting Type Surface Mount β€”
Differential Clock Input Yes (CK, CK#) β€”
On-Die Termination (ODT) Yes Yes
Density β€” 4Gb
Organization β€” 256M x 16
Supply Voltage (VDD/VDDQ) β€” 1.35V
Ball Pitch β€” 0.8mm
Burst Length β€” 8 and 4 (with burst chop)
Interface β€” 16-bit I/O
ZQ Calibration β€” Yes
Write Leveling β€” Yes
Auto Self-Refresh β€” Yes
Partial Array Self-Refresh β€” Yes

Datasheets & Resources

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