NT5CC256M16CP-DIB vs K4B4G1646D-BYK0 对比
详细并排对比 NT5CC256M16CP-DIB 出自 Nanya Technology 和 K4B4G1646D-BYK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Nanya Technology
NT5CC256M16CP-DIB - 4Gb DDR3L SDRAM 256Mx16 | Nanya Technology
NT5CC256M16CP-DIB ✓ 量产中规格对比
| 参数 | NT5CC256M16CP-DIB | K4B4G1646D-BYK0 |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $2.90 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gbit |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35V | 1.35 V (1.5 V compatible) |
| 数据速率 | 1600 Mbps (DDR3L-1600) | 1600 Mbps (PC3-12800) |
| 封装 | TFBGA-96 (9x13mm, 0.8mm pitch) | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Internal Banks | 8 | — |
| Refresh Cycles | 8192 | — |
| CAS Latency (CL) | 5, 6, 7, 8, 9 | — |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| RoHS | Compliant | — |
| 无卤 | Yes | — |
| Package Shape | Rectangular | — |
| 工作温度 | — | 0°C to 85°C |
| CAS 延迟 | — | Programmable (e.g., 11, 10, 9) |
| Burst Length | — | 8 (with burst chop 4) |
| On-Die Termination | — | Yes |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| RoHS Compliant | — | Yes |
| 引脚数 | — | 96 |
| Die Revision | — | D-die |