NT5CC256M16DN-FLNA vs NT5CC256M16DP-FLNA 对比

详细并排对比 NT5CC256M16DN-FLNA 出自 Nanya Technology 和 NT5CC256M16DP-FLNA 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Nanya Technology
NT5CC256M16DN-FLNA NT5CC256M16DN-FLNA - 4Gb DDR3L SDRAM | Nanya Technology

NT5CC256M16DN-FLNA - 4Gb DDR3L SDRAM | Nanya Technology

NT5CC256M16DN-FLNA ✓ 量产中
Nanya Technology
NT5CC256M16DP-FLNA NT5CC256M16DP-FLNA - 4Gb DDR3L SDRAM | Nanya Technology

NT5CC256M16DP-FLNA - 4Gb DDR3L SDRAM | Nanya Technology

NT5CC256M16DP-FLNA ✓ 量产中

规格对比

参数 NT5CC256M16DN-FLNA NT5CC256M16DP-FLNA
品牌 Nanya Technology Nanya Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.00 $20.00
存储器类型 DDR3L SDRAM DDR3L SDRAM
Density 4Gb —
存储组织 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V (1.283V-1.45V) —
Backward Compatible Voltage 1.5V ±0.075V —
数据速率 1600 Mbps (PC3-12800) 1600 Mbps (PC3L-12800)
CAS 延迟 11 11, 12, 13
Burst Length 8 8, 4 (with burst chop)
封装 96-ball FBGA BGA-96 (13x9 mm)
工作温度范围 Commercial: 0°C to +95°C (Tcase), Industrial: -40°C to +95°C (Tcase), Automotive: -40°C to +105°C (Tcase) —
接口 16-bit I/O SSTL-15
Refresh Auto-refresh and self-refresh Auto self-refresh, auto precharge
On-Die Termination (ODT) Yes —
DLL Yes —
RoHS Compliant Compliant
Total Density — 4 Gb
电源电压 — 1.35 V (1.283 V to 1.45 V)
Number of Banks — 8
工作温度 — -40°C to +95°C (industrial), -40°C to +105°C (automotive)
Lead-Free — Yes
特性 — Write leveling, dynamic ODT, ZQ calibration, data mask, asynchronous reset

数据手册与资源

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