NT5CC256M16DP-DI vs NT5CC256M16CP-DI 对比
详细并排对比 NT5CC256M16DP-DI 出自 Nanya Technology 和 NT5CC256M16CP-DI 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CC256M16DP-DI | NT5CC256M16CP-DI |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $2.90 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35V | 1.35V (1.283V to 1.45V) |
| 数据速率 | 1600 Mbps/pin (800MHz) | — |
| 封装 | VFBGA-96 | VFBGA-96 |
| 工作温度范围 | -40°C to +95°C (industrial) | — |
| CAS 延迟 | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | 8, 4 |
| Number of Banks | 8 | — |
| 接口 | Differential clock (CK, CK#) | Differential clock (CK, CK#) |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | Yes (programmable) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Total Density | — | 4Gb |
| Speed Grade | — | DDR3-1600 (CL11) |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Internal Banks | — | 8 |
| 工作温度 | — | 0C to +95C (Tc) [DATA_NEEDED: exact range] |
| Process Technology | — | 70nm |