NT5CC256M16DP-DI vs NT5CC256M16CP-DI Comparison
Detailed side-by-side comparison of NT5CC256M16DP-DI by Nanya Technology and NT5CC256M16CP-DI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5CC256M16DP-DI | NT5CC256M16CP-DI |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V (1.283V to 1.45V) |
| Data Rate | 1600 Mbps/pin (800MHz) | — |
| Package | VFBGA-96 | VFBGA-96 |
| Operating Temperature Range | -40°C to +95°C (industrial) | — |
| CAS Latency | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | 8, 4 |
| Number of Banks | 8 | — |
| Interface | Differential clock (CK, CK#) | Differential clock (CK, CK#) |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | Yes (programmable) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Total Density | — | 4Gb |
| Speed Grade | — | DDR3-1600 (CL11) |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Internal Banks | — | 8 |
| Operating Temperature | — | 0C to +95C (Tc) [DATA_NEEDED: exact range] |
| Process Technology | — | 70nm |