NT5CC256M16ER-FLNA vs NT5CC256M16CN-FLNA 对比
详细并排对比 NT5CC256M16ER-FLNA 出自 Nanya Technology 和 NT5CC256M16CN-FLNA 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CC256M16ER-FLNA | NT5CC256M16CN-FLNA |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $22.00 | $6.00 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35 V (1.283 V to 1.45 V) | — |
| I/O Voltage | 1.5 V | — |
| 数据速率 | 1866 Mbps (max) | 1866 Mbps (max) |
| 封装 | 96-ball TFBGA | 96-ball FBGA |
| Number of Terminals | 96 | — |
| 工作温度范围 | 0°C to +95°C (commercial/industrial) | 0C to +95C (TC) commercial, -40C to +95C industrial, -40C to +105C automotive |
| CAS 延迟 | Programmable (e.g., 13, 14) | 13 (at 1866 Mbps) |
| Burst Length | 8, 4 (with burst chop) | 8, 4 |
| Number of Banks | 8 | 8 |
| Refresh | Auto and self refresh | Auto-refresh, self-refresh, TCSR |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Supply Voltage (VDD) | — | 1.35 V (1.283 V to 1.45 V) |
| Supply Voltage (VDDQ) | — | 1.35 V (1.283 V to 1.45 V) |
| Storage Temperature | — | -55C to +100C |