TLE9180D32QKXUMA1 vs 1EBN1001AEXUMA1 对比

详细并排对比 TLE9180D32QKXUMA1 出自 Infineon 和 1EBN1001AEXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
TLE9180D32QKXUMA1 TLE9180D32QKXUMA1 - 6-Ch BLDC Gate Driver 90V LQFP-64 | Infineon

TLE9180D32QKXUMA1 - 6-Ch BLDC Gate Driver 90V LQFP-64 | Infineon

TLE9180D32QKXUMA1 ✓ 量产中

规格对比

参数 TLE9180D32QKXUMA1 1EBN1001AEXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.71 $4.41
Number of Channels 6 (3 high-side + 3 low-side) —
Driver Configuration Half-Bridge, 3-phase —
Supply Voltage Range (VS) 5.5 V to 72 V —
Maximum Pin Voltage 90 V (bridge, motor and supply pins) —
Gate Drive Current 1 A source/sink —
Battery Support 12 V, 24 V and 48 V systems —
接口 SPI (16-bit) with diagnostics —
Current Sense Amplifier Integrated, adjustable gain —
Functional Safety ASIL-C capable (per ISO 26262) —
工作温度 -40 C to +150 C junction -40 °C to +125 °C (automotive grade)
封装 PG-LQFP-64-27 (LQFP-64 EP) PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel)
Package Dimensions 10 mm x 10 mm x 1.4 mm —
安装类型 Surface Mount Surface Mount
AEC-Q100 Qualified —
RoHS Compliant —
Product Type — Isolated single-channel IGBT/MOSFET gate driver booster
Series — EiceDRIVER™ Boost (1EBN family)
Configuration — High-Side / Low-Side (non-inverting booster)
输出数量 — 2 (separate source and sink paths)
Peak Output Current — ±15 A
Number of Drivers — 1
Input Signal — ASC input, active-clamping disable
Active Clamping — Yes (very fast reaction time)
Automotive Qualification — AEC-Q100 qualified
MSL 等级 — [DATA_NEEDED: MSL level]
RoHS 状态 — Compliant
Target Switching Stage — Motor drives > 10 kW (up to 400 A modules)

数据手册与资源

浏览全部产品 创建 BOM 获取报价