W29N01HVBINF vs W29N01HVBINF-TR 对比
详细并排对比 W29N01HVBINF 出自 Winbond 和 W29N01HVBINF-TR 出自 Winbond。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | W29N01HVBINF | W29N01HVBINF-TR |
|---|---|---|
| 品牌 | Winbond | Winbond |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.21 | $1.62 |
| 存储器类型 | Non-volatile NAND Flash (SLC) | Non-volatile NAND Flash (SLC) |
| 存储容量 | 1 Gbit (128 M x 8) | — |
| Technology | ONFI 1.0 compliant SLC NAND | — |
| 存储组织 | 128M x 8 (1 page = 2112 B, 1 block = 64 pages) | x8 (8-bit multiplexed I/O bus) |
| 接口 | Parallel asynchronous x8 | Parallel ONFI 1.0 NAND |
| 电源电压 | 2.7 V to 3.6 V (3.3 V typical) | — |
| Page Read Access Time | 25 ns (typical) | — |
| Page Size | 2112 bytes (2048 data + 64 spare) | 2048 + 64 bytes |
| Block Size | 128 KB (64 pages x 2112 bytes) | [DATA_NEEDED: block size in pages] |
| Number of Blocks | 1024 blocks | — |
| Page Program Time | 250 us typical | — |
| Block Erase Time | 2 ms typical | — |
| ECC Support | On-chip 4-bit ECC per 528 bytes | — |
| Endurance | 100 K P/E cycles per block (SLC) | — |
| Data Retention | 10 years typical | — |
| 工作温度 | -40 to 85 degrees C (Industrial) | [DATA_NEEDED: industrial temp range] |
| 封装 | 63-ball VFBGA, 9 mm x 11 mm | 63-ball VFBGA, 9 mm x 11 mm |
| RoHS 状态 | Compliant | — |
| 安装类型 | Surface Mount | Surface Mount |
| Density | — | 1 Gbit (128 MB) |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V (3.3 V typical) |
| Random Access Time | — | 20 ns |
| ECC Requirement | — | 4-bit ECC per 528 bytes |
| Program/Erase Cycles | — | 100,000 cycles (SLC typical) |
| Compliance | — | RoHS compliant, Halogen-Free |
| Packaging | — | Tape and Reel (TR suffix) |