W9751G6KB-25-TR vs W9751G6KB-25 对比

详细并排对比 W9751G6KB-25-TR 出自 Winbond 和 W9751G6KB-25 出自 Winbond。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Winbond
W9751G6KB-25-TR W9751G6KB-25-TR - 512Mb DDR2 SDRAM x16 84-WBGA | Winbond

W9751G6KB-25-TR - 512Mb DDR2 SDRAM x16 84-WBGA | Winbond

W9751G6KB-25-TR ✓ 量产中

规格对比

参数 W9751G6KB-25-TR W9751G6KB-25
品牌 Winbond Winbond
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.62 $0.92
存储器类型 Volatile DRAM, DDR2 SDRAM Volatile DRAM (DDR2 SDRAM)
存储容量 512 Mbit (64 MB) 512 Mbit (32M x 16)
存储组织 32M x 16 (8M words x 4 banks x 16 bits) 32M words x 16 bits
接口 Parallel, SSTL_18 —
Clock Frequency 400 MHz (DDR2-800) 400 MHz
数据速率 800 MT/s 800 MT/s
Access Time 57.5 ns (clock cycle) 57.5 ns (CAS latency timing window)
Supply Voltage (VDD/VDDQ) 1.7 V to 1.9 V (1.8 V nominal) —
工作温度 0 C to 85 C (commercial) [DATA_NEEDED: operating temperature grade]
Number of Banks 4 —
Burst Length 4, 8 (with burst chop) 4 or 8 (programmable)
On-Die Termination (ODT) Yes, programmable —
Self-Refresh / Power-Down Supported —
封装 84-WBGA (8 x 12.5 mm) 84-ball WBGA / TFBGA, 8 x 12.5 mm
安装类型 Surface Mount Surface Mount
RoHS 状态 RoHS Compliant Compliant
Delivery Form Tape and Reel (TR) —
Speed Grade — -25 (DDR2-800)
电源电压 — 1.8 V typical
接口类型 — Parallel DDR2 (SSTL_18)
Refresh Cycles — 8K (per JEDEC DDR2 standard)
CAS 延迟 — Programmable (typically 3 to 6)
On-Die Termination — Yes (ODT)
Self Refresh — Yes

数据手册与资源

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