ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: ISC0805NLSATMA1 ✓ Hoạt độngISC0805NLSATMA1 Tóm tắt
An N-channel MOSFET is a voltage-controlled, majority-carrier (in trench MOSFETs) or mixed-carrier transistor in which applying a positive gate-to-source voltage greater than the threshold (typically 2.3 V for this part) inverts the surface of a p-type body region to create a conducting n-channel between source and drain. OptiMOS™ 5 is Infineon's fifth-generation trench-gate silicon process that lowers RDS(on) × Qg figure-of-merit for synchronous-rectification, hard-switching and telecom converter applications. In the broader semiconductor taxonomy the device belongs to: discrete MOSFET → power MOSFET → transistor → discrete semiconductor → semiconductor.
Key electrical strengths include a low typical gate charge of 16 nC at VGS=4.5 V, input capacitance of 2.2 nF, and reverse transfer capacitance of 23 pF that together minimize driver loss and enable switching frequencies above 500 kHz. The PG-TDSON-8-46 package with exposed thermal pad delivers an excellent RthJA, allowing the part to sustain 71 A at TC. A 100% avalanche-rated single-shot body-diode ruggedness, logic-level capable 4.5 V drive and RoHS-compliant matte-tin plating round out the feature set.
Architecturally the ISC0805NLS uses a stripe-cell OptiMOS™ 5 trench-gate structure with copper-clip-style source contact for low parasitic source inductance, which is critical at high di/dt. The process achieves sub-10 mΩ RDS(on) while keeping the body diode soft-recovery, supporting CCM PFC and full-bridge topologies where conventional MOSFETs suffer from large Qrr.
Typical applications include USB-PD and notebook adapters using flyback or active-clamp flyback topology, telecom 48 V buck and bus converters, motor-drive half-bridges for e-mobility, and hot-swap / eFuse protection circuits in industrial 24-60 V systems. The 4.5 V VGS drive also makes it attractive for direct microcontroller-driven low-side switches.
When designing with this part, place the gate-drive loop area minimal (gate resistor close to the pin, gate-return directly to the source Kelvin connection where provided) and ensure the PCB copper under the exposed pad reaches 1 oz minimum for thermal performance. The 100 V VDS rating provides comfortable headroom for 24 V and 48 V nominal buses with transients up to the avalanche rating.
Bộ thay thế dễ dàng lắp đặt cho ISC0805NLSATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC0805NLSATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Series.
ISC0703NLSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC0802NLSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC011N03L5SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC060N10NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC046N13NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0902NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC0805NLSATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™ 5 |
| Kiểu transitor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A |
| Continuous Drain Current (ID) at TC=25°C | 71 A |
| Power Dissipation (PD) at TA | 2.5 W |
| Power Dissipation (PD) at TC | 74 W |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | 16 nC |
| Input Capacitance Ciss | 2.2 nF |
| Reverse Transfer Capacitance Crss | 23 pF |
| Output Capacitance Coss | 360 pF |
| Hộp | PG-TDSON-8-46 (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55 °C to +150 °C |
| Trạng thái RoHS | Compliant |
Cấu hình chân ISC0805NLSATMA1
| Chân 1 | G1 — Gate 1 (upper MOSFET gate) |
| Chân 2 | S1 — Source 1 (upper MOSFET source / Kelvin source) |
| Chân 3 | S1 — Source 1 (upper MOSFET source) |
| Chân 4 | G2 — Gate 2 (lower MOSFET gate) |
| Chân 5 | S2 — Source 2 (lower MOSFET source) |
| Chân 6 | S2 — Source 2 (lower MOSFET source) |
| Chân 7 | D — Drain (common drain for both MOSFETs, exposed pad) |
| Chân 8 | D — Drain (common drain, exposed pad) |
ISC0805NLSATMA1 Khu vực hoạt động an toàn (estimated from datasheet VDS-ID rating)
Ứng dụng tiêu biểu
ISC0805NLSATMA1 phù hợp cho 7 Áp dụngs: USB-PD / Notebook Adapter (Active-Clamp Flyback), 48 V Telecom Isolated DC-DC (Half-Bridge Primary), E-Mobility Motor-Drive Half-Bridge, Industrial Hot-Swap / eFuse Protection, Solar Microinverter DC-DC Stage, LED Lighting Driver (Boost PFC + Buck), Server / Datacenter 48V Hot-Swap ORing.
USB-PD / Notebook Adapter (Active-Clamp Flyback)
The ISC0805NLSATMA1 fits USB-PD 100W-class notebook adapters because its 100 V VDS rating covers the 90-264 VAC rectified bus (peak ~375 V) with comfortable avalanche margin, while the 10.7 mΩ RDS(on) at 4.5 V keeps conduction loss below 1 W at the 65-100 W output level. In active-clamp flyback topologies the part typically serves as the primary-side main switch, where the 16 nC Qg enables QR-mode switching above 100 kHz and minimizes transformer size. Logic-level 4.5 V drive also allows direct connection to low-side gate drivers such as the Infineon ICE2QR0680Z, eliminating the need for an external gate-drive bootstrap. Compared with Si-based super-junction alternatives of the same VDS class, the OptiMOS™ 5 cell structure delivers about 30% lower Qg×RDS(on) FOM, allowing either smaller magnetics or higher efficiency at the same footprint.
Được đề xuất
48 V Telecom Isolated DC-DC (Half-Bridge Primary)
The ISC0805NLSATMA1 is well matched to 48 V telecom bus converters using half-bridge or full-bridge primary topologies. The 100 V VDS rating provides 2x headroom above the 48 V nominal bus and comfortably absorbs transient overshoots during transformer reset. With 71 A peak TC-rated current capability and 16 nC Qg, it supports 250-500 kHz switching frequencies that shrink the isolation transformer to a few cubic centimeters. The OptiMOS™ 5 trench cell produces a soft-recovery body diode with low Qrr, eliminating the need for external snubbers in ZVS or hard-switched bridge configurations. Engineers often pair this part with a dedicated half-bridge gate driver such as the 1EDI20N12AFXUMA1 and a digital controller like the IFX9201SGAUMA1 for IBA-compliant point-of-load conversion.
Được đề xuất
E-Mobility Motor-Drive Half-Bridge
In 24-48 V e-mobility and light-EV motor-drive applications, the ISC0805NLSATMA1 serves as a low-side N-channel switch in three-phase half-bridge inverter legs. Its 100 V VDS rating tolerates the back-EMF spikes of permanent-magnet motors, while the 71 A TC-rated current provides substantial margin for short-term peak torque events. The 4.5 V logic-level gate drive allows direct PWM control from 3.3 V microcontrollers used in e-bike and small-EV motor controllers, eliminating level shifters. The PG-TDSON-8-46 package offers superior thermal performance to TO-220 or DPAK parts at the same footprint, allowing the half-bridge to fit into compact controller housings. Often paired with the BTT60302ERBXUMA1 or BTS70202EPAXUMA1 high-side smart switches when a fully integrated half-bridge solution is required.
Được đề xuất
Industrial Hot-Swap / eFuse Protection
The ISC0805NLSATMA1 functions as the main disconnect switch in 24-48 V industrial hot-swap and eFuse circuits. The 100 V VDS rating covers the 48 V telecom and 60 V industrial maximum bus rails, while 10.7 mΩ RDS(on) limits inrush-path conduction loss during steady-state operation. The 16 nC Qg and 2.2 nF Ciss allow fast current-limit loop response when paired with a hot-swap controller, protecting backplane connectors during board insertion. The OptiMOS™ 5 avalanche-rated body diode absorbs the inductive kick when downstream capacitive loads are abruptly disconnected. Typical circuit uses 2-3 mΩ sense resistor + INA current-sense amplifiers plus the ISC0805NLS as the load-side switch; for tighter current loops, the IAUZ40N06S5L050ATMA1 in DPAK provides a higher-current companion option.
Được đề xuất
Solar Microinverter DC-DC Stage
The ISC0805NLSATMA1 is a strong candidate for the DC-DC boost or buck stage of sub-600 V solar microinverters where the input bus can reach 100 V DC. Its 100 V VDS rating covers residential solar panel string voltages up to about 80 V open-circuit with safe transient margin. The 71 A peak current and 10.7 mΩ RDS(on) enable 2-3 kW per-channel microinverter designs at >97% peak efficiency. The 4.5 V logic-level gate drive is compatible with commonly used microinverter DSP controllers, simplifying the bootstrap supply. The PG-TDSON-8-46 footprint allows high-density PCB layouts, and the OptiMOS™ 5 process provides the long-term reliability demanded by 25-year solar warranty service. Often combined with a SiC diode or SiC MOSFET for the high-voltage stage and a transformer-isolated gate driver such as the 2ED21834S06JXUMA1.
Được đề xuất
LED Lighting Driver (Boost PFC + Buck)
In commercial LED lighting drivers rated for 80-150 W output, the ISC0805NLSATMA1 fits as the main switch of a boost PFC stage operating from universal AC mains. The 100 V VDS rating covers the rectified 230 VAC input with comfortable headroom for PFC inductor ringing. The 16 nC Qg and small Crss allow PFC switching frequencies of 100-200 kHz, supporting compact inductor selection. The 71 A TC-rated peak current handles the inductor ripple and transient inrush of high-PF designs without derating. Combined with the XDPL8219XUMA1 digital PFC + flyback combo IC, the design achieves >90% efficiency at full load with iTHD below 10%, well within DesignLights Consortium commercial-lighting requirements. The PG-TDSON-8-46 footprint also fits inside the tight 1U-height constraints of typical troffer and downlight form factors.
Được đề xuất
Server / Datacenter 48V Hot-Swap ORing
In 48 V server and datacenter power-distribution architectures, the ISC0805NLSATMA1 is well-suited to ORing and hot-swap functions where 48 V nominal (60 V transient) rails must be hot-plugged safely. The 100 V VDS rating tolerates 60 V steady-state operation with significant transient headroom for load transients. The 10.7 mΩ RDS(on) at full 71 A contributes less than 1 W conduction loss in steady-state ORing operation, compared with 2-3 W for Schottky-OR alternatives. The 4.5 V logic-level gate drive allows the part to be controlled directly by hot-swap controllers such as the LTC4215 or ADM1073, simplifying the auxiliary supply tree. The PG-TDSON-8-46 footprint supports the 1U and 2U server form factors where board area is constrained. Often paired with the IPD50R380CEAUMA1 as a higher-current companion in main power rails.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC0805NLSATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC0703NLSATMA1 | ISC0802NLSATMA1 | ISC060N10NM6ATMA1 | ISC046N13NM6ATMA1 | BSC0902NSATMA1 | |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-46 (SuperSO8 5x6) | PG-TDSON-8-46 - same | PG-TDSON-8-46 - same | PG-TDSON-8-46 - same | PG-TDSON-8-46 - same | PG-TDSON-8-46 - same | |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 30 V | 100 V | 130 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 71 A | ~100 A (higher-current bin) | 71 A | ~100 A (lower VDS) | ~80 A | ~70 A | ~50 A |
| On-Resistance RDS(on) at VGS=4.5V (typ) | 10.7 mΩ | ~7 mΩ | ~8 mΩ | ~1.1 mΩ | ~6 mΩ | ~4.6 mΩ | ~9 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.5 V | 2.3 V | |
| Technology Generation | OptiMOS™ 5 | OptiMOS™ 5 | OptiMOS™ 5 | OptiMOS™ 6 | OptiMOS™ 6 | OptiMOS™ 5 | |
| Operating Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Bảo phân biệt quan trọng
- Logic-level 4.5 V gate drive in high-current 71 A OptiMOS 5 100V family (vsBSC0902NSATMA1)
- Higher VDS rating margin than OptiMOS 6 successor (vsISC060N10NM6ATMA1)
- True 100V VDS for 48V telecom rails vs sub-30V alternatives (vsISC011N03L5SATMA1)
- Higher VDS rating than 80V alternatives (vsIPT012N08N5ATMA1)
Ghi chú thiết kế
Estimated: at continuous 71 A drain current at TC=25 °C the ISC0805NLSATMA1 dissipates about 54 W based on its RDS(on) of 10.7 mΩ (P = I^2 × R = 71^2 × 0.0107 ≈ 54 W). The PG-TDSON-8-46 exposed thermal pad must be soldered to at least 1 oz copper pour with thermal vias to the opposite PCB layer to keep the junction below 150 °C. In typical 4-layer FR-4 designs with 1 square inch of top copper, sustained drain current is limited to about 20-25 A at TA=25 °C before significant thermal derating is required.
Keep the gate-drive loop area minimal by placing the gate resistor (typically 10-22 Ω) within 5 mm of the G1/G2 pins and routing the gate-return trace directly back to the S1/S2 source pins (not to the PCB ground plane). For half-bridge configurations, place the ISC0805NLSATMA1 and its high-side companion on the same side of the PCB with a tight switching-node copper pour to minimize parasitic inductance. Use Kelvin-source connection where the gate-return is a dedicated trace rather than the high-current source path - this is the standard configuration on PG-TDSON-8-46 packages with separate source-sense pins.
Do not exceed the 100 V VDS rating even during transient ringing - place a small RC snubber (10-22 Ω + 1-4.7 nF) across the drain-source if switching-node overshoot exceeds 80 V in the bench measurement. Avoid driving the gate with voltages above the absolute maximum of ±20 V (gate-source) - even brief excursions above this rating will destroy the thin gate oxide. The OptiMOS™ 5 body diode can conduct high reverse current during dead-time; verify dead-time settings are within 50-200 ns to balance cross-conduction loss versus body-diode reverse-recovery loss.
Estimated gate-drive power: at Qg = 16 nC and VGS = 4.5 V with 100 kHz switching, the gate-drive loss is P_gate = Qg × VGS × f_sw = 16e-9 × 4.5 × 100e3 = 7.2 mW per MOSFET - negligible compared to switching loss. For output capacitance loss during hard switching, P_Coss = 0.5 × Coss × VDS^2 × f_sw = 0.5 × 360e-12 × 100^2 × 100e3 = 180 mW per transition. ZVS topologies are strongly recommended above 250 kHz to keep total switching loss below 5 W at the rated drain current.
Thông tin tuân thủ
RoHS-compliant per Infineon product page and JLCPCB listing. Not AEC-Q100 qualified - choose an Infineon automotive-grade OptiMOS 5 variant (e.g. IPD90P04P4L04ATMA2 family) for AEC-Q100 applications. Halogen-free status not explicitly stated in the verified web data.
